Oxide Semiconductor LCD Pixel Aperture Ratio

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Solution Overview

Problem

Conventional liquid crystal display devices face challenges in achieving high pixel aperture ratio, contrast, and luminance, particularly when using silicon semiconductors, and there is a need for alternative semiconductor materials that can enhance these performance metrics.

Innovation Solution

A liquid crystal display device incorporating a conductive oxide semiconductor film with a specific structure, including a first and second oxide semiconductor film, insulating films, and a conductive film, which increases the pixel aperture ratio and enables high contrast and luminance by optimizing the alignment and structure of these components.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If silicon semiconductors are used in liquid crystal display devices, then the device can be manufactured with conventional processes, but the pixel aperture ratio is limited and cannot achieve high contrast and luminance

Engineering Contradiction:
ImprovemanufacturabilityVSAvoidluminance
Core Design Contradiction:
Ease of manufactureVSIllumination intensity

Solution Approach 1:

The patent changes the material parameter from silicon semiconductor to oxide semiconductor, which fundamentally alters the electrical characteristics and enables higher aperture ratios while maintaining manufacturability through similar fabrication processes

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent employs a composite structure combining oxide semiconductor films with insulating films and conductive films, creating a multi-layered pixel electrode system that achieves superior optical and electrical performance

Inventive Principle:
Principle #40Composite materials

2Device complexity

If conventional transistor structures are used, then the device structure is simple, but the pixel aperture ratio cannot be increased

Engineering Contradiction:
Improvestructure complexityVSAvoidpixel aperture ratio
Core Design Contradiction:
Device complexityVSArea of stationary object

Solution Approach 1:

The patent transitions from planar transistor structures to multi-layered vertical structures, utilizing the thickness dimension to stack oxide semiconductor films, insulating films, and conductive films, thereby increasing pixel aperture ratio without significantly increasing planar footprint

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent implements a nested structure where oxide semiconductor films are embedded within insulating films and conductive films, creating a compact multi-layered pixel electrode system that maximizes space utilization

Inventive Principle:
Principle #7Nested doll (Nesting)

3Illumination intensity

If oxide semiconductor films are used instead of silicon semiconductors, then the pixel aperture ratio increases, but new manufacturing processes and materials are required

Engineering Contradiction:
Improveaperture ratioVSAvoidmanufacturing process
Core Design Contradiction:
Illumination intensityVSEase of manufacture

Solution Approach 1:

The patent changes the semiconductor material parameter from silicon to oxide semiconductor, enabling higher aperture ratios while the fabrication processes remain comparable to conventional technologies, thus balancing performance improvement with manufacturing feasibility

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS9612499B2Liquid crystal display device and electronic device using liquid crystal display device
Publication Date: 2017.04.04 SEMICON ENERGY LAB CO LTD
  • US9612499B2 patent drawing
  • US9612499B2 patent drawing
  • US9612499B2 patent drawing

AI summary

A liquid crystal display device with an increased pixel aperture ratio is provided. A liquid crystal display device that displays an image with high contrast and high luminance is provided. The liquid crystal display device includes a first pixel electrode; a second pixel electrode; a transistor; a capacitor; a first insulating film; a second insulating film; and a third insulating film. The transistor includes a gate electrode; a gate insulating film; a first oxide semiconductor film; and a source electrode and a drain electrode. One of a pair of electrodes of the capacitor includes a second oxide semiconductor film. The first insulating film is provided over the first oxide semiconductor film. The second insulating film is provided over the second oxide semiconductor film such that the second oxide semiconductor film is sandwiched between the first insulating film and the second insulating film. The third insulating film overlaps with an end of the first pixel electrode. The second pixel electrode is provided over the third insulating film.