Oxide Semiconductor Oxygen Provider Layer Stability
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Solution Overview
Problem
Oxide semiconductor materials like IGZO are prone to degradation due to oxygen deficiencies and excess oxygen, affecting device characteristics, and existing methods fail to effectively protect these materials from ambient influences and manufacturing process conditions.
Innovation Solution
A manufacturing method involving the formation of a first oxygen provider layer on a barrier layer, followed by an oxide semiconductor layer, which provides oxygen and shields the layer from environmental and process-induced degradation, enhancing stability and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If oxide semiconductor layer is formed without oxygen provider layer, then manufacturing process is simpler, but oxygen vacancies occur and film quality degrades
Solution Approach 1:
An oxygen provider layer is formed on the barrier layer before forming the oxide semiconductor layer. This preliminary oxygen supply ensures that when the oxide semiconductor layer is formed, oxygen is already available at the interface, preventing oxygen vacancies and maintaining high film quality without complex post-processing.
Solution Approach 2:
The oxygen provider layer acts as an intermediary between the barrier layer and the oxide semiconductor layer. It mediates the oxygen supply to the oxide semiconductor layer, ensuring stable oxygen concentration and preventing direct exposure to ambient conditions that would cause degradation.
2Ease of manufacture
If oxide semiconductor layer is exposed to ambient condition, then manufacturing process is simpler, but oxygen diffuses outward and conductivity increases excessively
Solution Approach 1:
The oxygen provider layer creates a protected environment for the oxide semiconductor layer by maintaining a oxygen-rich interface. This prevents oxygen diffusion outward and keeps the oxide semiconductor layer in a stable semiconductor state rather than converting to a highly conductive state due to oxygen loss.
Solution Approach 2:
The barrier layer is annealed and oxygen provider layer is formed in advance before the oxide semiconductor layer is exposed to ambient conditions. This preliminary oxygen treatment ensures the oxide semiconductor layer remains protected throughout subsequent manufacturing steps, maintaining device reliability.
3Manufacturing precision
If oxygen treatment is performed on barrier layer, then oxygen provider layer is formed and film quality improves, but manufacturing process complexity increases
Solution Approach 1:
The oxygen treatment step is integrated into the existing manufacturing process flow, combining the formation of the oxygen provider layer with the barrier layer preparation. This merging approach minimizes additional process complexity while achieving improved film quality through the oxygen provider layer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively controls oxygen vacancies and maintains the film quality of the oxide semiconductor layer, improving the stability and reliability of the device by providing a consistent oxygen supply and preventing oxygen diffusion.
Implementation Method 1
An annealing process is performed after the step of forming the barrier layer
Implementation Method 2
A first oxygen treatment is performed on the barrier layer after the annealing process for forming a first oxygen provider layer on the barrier layer
Data Source
AI summary
A manufacturing method of an oxide semiconductor device includes the following steps. A barrier layer is formed on a substrate. An annealing process is performed after the step of forming the barrier layer. A first oxygen treatment is performed on the barrier layer after the annealing process for forming a first oxygen provider layer on the barrier layer. An oxide semiconductor layer is then formed on the first oxygen provider layer.