Oxide Semiconductor Transistor with Oxygen Reservoir Insulator
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Solution Overview
Problem
Oxygen vacancies in oxide semiconductor films used for transistors lead to adverse effects on electrical characteristics, such as shifts in threshold voltage and fluctuations in performance, due to hydrogen bonding and carrier supply issues.
Innovation Solution
Incorporating excess oxygen regions with concentration gradients in insulating films and using specific oxide semiconductor materials like In-M-Zn oxide with controlled atomic ratios, along with a multilayer structure and c-axis alignment, to reduce oxygen vacancies and improve reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If an oxide semiconductor film is used for a transistor channel region, then the device can be manufactured with potential low power consumption, but oxygen vacancies in the film cause threshold voltage shifts and electrical characteristic changes
Solution Approach 1:
The patent applies preliminary action by forming an insulating film containing excess oxygen before forming the oxide semiconductor film. This excess oxygen is pre-positioned to compensate for oxygen vacancies that will form during subsequent processing, thereby preventing threshold voltage shifts and electrical characteristic changes before they occur
Solution Approach 2:
The insulating film containing excess oxygen acts as an intermediary between the oxide semiconductor film and the external environment. It serves as an oxygen reservoir that can supply oxygen to the semiconductor film when vacancies form, mediating the oxygen supply to maintain electrical characteristic stability
2Ease of manufacture
If oxygen vacancies are present in the oxide semiconductor film, then the film can be formed more easily, but hydrogen bonds with oxygen vacancies to create carrier supply sources that fluctuate electrical characteristics
Solution Approach 1:
The patent applies preliminary anti-action by introducing excess oxygen into the insulating film before the oxide semiconductor film is formed. This creates a counterbalancing oxygen reservoir that actively counteracts the formation of oxygen vacancies and their subsequent bonding with hydrogen, preventing the harmful effect before it can develop
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach stabilizes electrical characteristics, reduces power consumption, and enhances the reliability of oxide semiconductor transistors by minimizing oxygen vacancies and hydrogen impact, leading to improved transistor performance and display device functionality.
Implementation Method 1
an insulating film that releases oxygen by heating to reduce oxygen vacancy in the oxide semiconductor film
Data Source
AI summary
To suppress a change in electrical characteristics and improve reliability in a transistor including an oxide semiconductor film. Provided is a semiconductor device including a transistor including a first gate electrode, a first insulating film over the first gate electrode, a first oxide semiconductor film over the first insulating film, a source electrode electrically connected to the first oxide semiconductor film, a drain electrode electrically connected to the first oxide semiconductor film, a second insulating film over the first oxide semiconductor film, a second oxide semiconductor film as a second gate electrode over the second insulating film, and a third insulating film over the second oxide semiconductor film. The second insulating film includes an excess oxygen region having a concentration gradient.