Oxide Semiconductor Material Suppressing Oxygen Vacancies
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Solution Overview
Problem
Existing semiconductor devices face reliability issues due to the formation of oxygen vacancies in oxide semiconductor materials, which affect the performance and stability of transistors used in electronic devices.
Innovation Solution
A method for manufacturing an oxide semiconductor film with fewer oxygen vacancies by using a material represented as InM1XM2(1-X)ZnYOZ, where M1 is a Group 13 element, such as Ga, and M2 is a tetravalent element like Ti, Zr, or Sn, to prevent oxygen vacancy formation, and ensuring high purity and supersaturation with oxygen, thereby improving transistor reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional oxide semiconductor materials are used, then the manufacturing process is simple, but oxygen vacancies form leading to poor reliability
Solution Approach 1:
The patent uses a composite oxide semiconductor material with the formula InM1XM2(1-X)ZnYOZ, combining multiple elements (In, Ga, Ti, Zn, and oxygen) in specific ratios. This composite structure prevents oxygen vacancy formation while maintaining transistor reliability, directly resolving the contradiction between simplicity and reliability.
Solution Approach 2:
The patent specifies precise compositional parameters: M1 is Ga with 0.05<X≤0.50 atomic ratio, M2 is Ti with 0.01≤Y<0.50 atomic ratio, and Zn with 0.50<Z≤1.00 atomic ratio. By controlling these parameters within specific ranges, the material achieves both simplicity in manufacturing and high reliability by preventing oxygen vacancies.
2Reliability
If oxide semiconductor materials with fewer oxygen vacancies are used, then transistor reliability improves, but the manufacturing precision requirements increase
Solution Approach 1:
The patent defines specific parameter ranges for the oxide semiconductor composition: In:M1:M2:Zn atomic ratios of 1:X:Y:Z where 0.05<X≤0.50, 0.01≤Y<0.50, and 0.50<Z≤1.00. These parameter specifications enable manufacturers to achieve the desired reliability without excessive precision requirements by providing clear manufacturing targets.
Solution Approach 2:
The patent optimizes the local composition around metal atoms by introducing tetravalent M2 elements (Ti, Zr, Hf, Ge, or Sn) at specific concentrations. This local compositional adjustment prevents oxygen vacancy formation specifically at metal-oxygen interfaces, improving reliability without requiring high precision throughout the entire material structure.
Data Source
AI summary
One embodiment of the present invention is a material which is suitable for a semiconductor included in a transistor, a diode, or the like. One embodiment of the present invention is an oxide material represented as InM1XM2(1-X)ZnYOZ (0<X<1, 0<Y<1, and Z<1), where M1 is an element belonging to Group 13 and preferably Ga, and M2 is an element belonging to Group 4 or 14. Typically, the content of M2 is arranged to be greater than or equal to 1 atomic % and less than 50 atomic % of that of M1. Generation of oxygen vacancies can be suppressed in an oxide semiconductor material having the above composition. It is also possible to further improve reliability of a transistor with the oxide semiconductor material with the above composition by compensating oxygen vacancies with excessive oxygen.