Oxide Semiconductor Pillar Transistor for High Integration
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Solution Overview
Problem
As transistors are miniaturized, they experience deterioration in electrical characteristics, requiring a solution to maintain high-speed operation and integration while minimizing size.
Innovation Solution
A semiconductor device manufacturing method involving the formation of a semiconductor film with conductive pillars, island-shaped masks, and gate electrodes, utilizing an oxide semiconductor film to enhance switching characteristics and integration density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If transistors are miniaturized to increase integration density, then device size is reduced, but electrical characteristics deteriorate
Solution Approach 1:
The patent changes the material parameter from conventional semiconductor to oxide semiconductor, which fundamentally alters the electrical characteristics. This material substitution enables maintenance of good electrical characteristics even at miniaturized dimensions, resolving the contradiction between size reduction and performance degradation
Solution Approach 2:
The patent employs a composite structure combining oxide semiconductor film with conductive films and insulating films. This multi-material approach creates a transistor structure that maintains electrical performance while enabling miniaturization, addressing the contradiction between integration density and electrical characteristics
2Area of moving object
If transistors are miniaturized to reduce device size, then area is reduced, but switching characteristics worsen
Solution Approach 1:
By changing the semiconductor material to oxide semiconductor, the patent achieves low off-state leakage current and high on-state current even in miniaturized devices. This material parameter change preserves switching characteristics while reducing device area
Solution Approach 2:
The patent applies different materials to different regions: oxide semiconductor in the channel region for low leakage, conductive films for electrodes, and insulating films for isolation. This local differentiation maintains switching performance while enabling miniaturization
Data Source
AI summary
A semiconductor device that operates at high speed. A semiconductor device with favorable switching characteristics. A highly integrated semiconductor device. A miniaturized semiconductor device. The semiconductor device is formed by: forming a semiconductor film including an opening, on an insulating surface; forming a conductive film over the semiconductor film and in the opening, and removing the conductive film over the semiconductor film to form a conductive pillar in the opening; forming an island-shaped mask over the conductive pillar and the semiconductor film; etching the conductive pillar and the semiconductor film using the mask to form a first electrode and a first semiconductor; forming a gate insulating film on a top surface and a side surface of the first semiconductor; and forming a gate electrode that is in contact with a top surface of the gate insulating film and faces the top surface and the side surface of the first semiconductor.