Signal Processing Circuit With Oxide Semiconductor Memory
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Solution Overview
Problem
Conventional signal processing circuits face challenges in reducing power consumption, particularly when power supply is stopped for short periods, due to high off-state current in transistors and complex manufacturing processes of nonvolatile memory devices.
Innovation Solution
A signal processing circuit utilizing a memory element with a phase-inversion element, a capacitor, and a switching element featuring a transistor with a highly purified oxide semiconductor in the channel formation region, which significantly reduces off-state current and allows data retention without continuous power supply.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by stationary object
If conventional transistors are used in memory devices, then data can be stored and accessed, but off-state currents cause increased power consumption even when data is not being written
Solution Approach 1:
The patent changes the material parameter of the transistor channel from conventional semiconductor to highly purified oxide semiconductor, which fundamentally alters the off-state current characteristics and enables ultra-low power consumption while maintaining data retention capability
Solution Approach 2:
The patent creates an inert environment by highly purifying the oxide semiconductor to remove impurities like moisture and hydrogen, which act as charge carriers in off-state. This purified state maintains reliability while minimizing power consumption
2Use of energy by stationary object
If heat treatment is applied to purify oxide semiconductor, then off-state current is reduced, but manufacturing process complexity increases
Solution Approach 1:
The patent merges the oxide semiconductor formation and purification steps into a integrated manufacturing flow, where the oxide semiconductor layer is formed and then subjected to heat treatment in-situ, reducing the need for separate purification processes and simplifying the overall manufacturing complexity
Solution Approach 2:
The patent optimizes heat treatment parameters (temperature, atmosphere, duration) to achieve effective purification without requiring excessively complex process equipment or multiple processing stages, balancing purification effectiveness with manufacturing simplicity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively suppresses power consumption by minimizing off-state current and enabling data retention even when power supply is stopped, simplifying the manufacturing process and reducing power usage in memory devices.
Implementation Method 1
A signal processing circuit utilizing a memory element with a phase-inversion element, a capacitor, and a switching element featuring a transistor with a highly purified oxide semiconductor in the channel formation region, which significantly reduces off-state current by using heat treatment to minimize impurities like moisture and hydrogen
Data Source
AI summary
It is an object to provide a memory device for which a complex manufacturing process is not necessary and whose power consumption can be suppressed and a signal processing circuit including the memory device. In a memory element including a phase-inversion element by which the phase of an input signal is inverted and the signal is output such as an inverter or a clocked inverter, a capacitor which holds data and a switching element which controls storing and releasing of electric charge in the capacitor are provided. For the switching element, a transistor including an oxide semiconductor in a channel formation region is used. The memory element is applied to a memory device such as a register or a cache memory included in a signal processing circuit.