Oxide Semiconductor Solution Composition for Amorphous Film Formation
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Solution Overview
Problem
The use of silicon semiconductors in electronic devices, such as thin film transistors, faces limitations due to amorphous silicon's low charge mobility and the high cost and complexity of polycrystalline silicon processing, while oxide semiconductors are difficult to control for stable and reliable electronic device performance.
Innovation Solution
A solution composition for forming an oxide semiconductor is developed, comprising a metal oxide precursor and a metal thioacetate or its derivative, which includes specific metals and is formulated to inhibit crystalline formation, allowing for the creation of an amorphous metal oxysulfide semiconductor with improved electrical characteristics, used in a thin film transistor.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If amorphous silicon is used as semiconductor, then manufacturing process is simple, but charge mobility is low
Solution Approach 1:
The patent changes the material composition parameters by introducing metal thioacetate and its derivatives as additives in the oxide semiconductor formation process. This compositional modification enables the oxide semiconductor to achieve high charge mobility while maintaining amorphous structure, thus improving electrical characteristics without complicating the manufacturing process
Solution Approach 2:
The patent creates a composite material system by combining oxide semiconductor with metal thioacetate and its derivatives. This composite approach allows the material to exhibit both the ease of amorphous silicon processing and the high charge mobility characteristics needed for reliable electronic devices
2Reliability
If polycrystalline silicon is used as semiconductor, then charge mobility is high, but manufacturing process is complex and costly
Solution Approach 1:
The patent modifies the material parameters by using metal thioacetate additives during oxide semiconductor formation, enabling the material to achieve high charge mobility comparable to polycrystalline silicon while remaining in amorphous form, thus avoiding complex crystallization processes
Solution Approach 2:
The patent employs a low-cost solution-based manufacturing approach using metal thioacetate additives that can be applied through simple coating methods, replacing expensive and complex polycrystalline silicon fabrication processes while achieving comparable electrical performance
3Ease of manufacture
If oxide semiconductor is used, then manufacturing process is simplified, but electrical characteristics are difficult to control
Solution Approach 1:
The patent precisely controls electrical characteristics by adjusting the concentration and type of metal thioacetate additive in the oxide semiconductor formation process. This parameter control mechanism enables reproducible electrical properties while maintaining the simplicity of solution-based manufacturing
Solution Approach 2:
The patent implements control over electrical characteristics through the systematic use of metal thioacetate additives, where the additive concentration and composition serve as controllable parameters that directly influence the electrical properties of the oxide semiconductor, enabling precise manufacturing control
Data Source
AI summary
A solution composition for forming an oxide semiconductor includes a metal oxide precursor, and one of a metal thioacetate and a derivative thereof.