Oxide Semiconductor Stack for High On-State Current
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving high on-state current, low off-state current, and stable electrical characteristics, particularly in transistors using oxide semiconductors, due to issues with oxygen vacancies and hydrogen incorporation.
Innovation Solution
A semiconductor device structure incorporating a first insulator with excess oxygen, multiple oxide semiconductor layers with varying oxygen-transmitting properties and crystallinity, and conductors separated by insulators to manage oxygen and hydrogen, enhancing oxygen transmission and reducing defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-generated harmful factors
If an oxide semiconductor layer is used to achieve low off-state current, then off-state current is reduced, but on-state current remains insufficient
Solution Approach 1:
The patent applies local quality by creating different regions within the oxide semiconductor layer with different oxygen concentrations. The first oxide semiconductor layer has a first oxygen concentration while the second oxide semiconductor layer has a second oxygen concentration, creating local variations in electrical properties. This allows the device to achieve both low off-state current in certain regions and high on-state current in other regions, resolving the contradiction between these two opposing requirements.
Solution Approach 2:
The patent uses composite materials by stacking multiple oxide semiconductor layers with different compositions and oxygen concentrations. The first oxide semiconductor layer and second oxide semiconductor layer are combined to create a composite structure that exhibits both low off-state current characteristics and high on-state current characteristics, thereby resolving the contradiction between these two opposing performance requirements.
2Reliability
If oxygen vacancies are reduced to improve electrical characteristics, then reliability is improved, but manufacturing complexity increases
Solution Approach 1:
The patent applies preliminary action by forming the oxide semiconductor layers with controlled oxygen concentrations during the manufacturing process itself, rather than requiring subsequent complex treatments to reduce oxygen vacancies. The layers are deposited with specific oxygen content from the beginning, and heat treatment is used to stabilize this structure, thereby improving reliability without significantly increasing manufacturing complexity.
Solution Approach 2:
The patent uses parameter changes by controlling the oxygen concentration parameter during the formation of oxide semiconductor layers. By adjusting the oxygen concentration during deposition and using heat treatment to stabilize specific oxygen levels, the patent reduces oxygen vacancies and improves electrical characteristics stability while maintaining a relatively simple manufacturing process that builds on existing semiconductor fabrication techniques.
3Power
If multiple oxide semiconductor layers with different oxygen concentrations are stacked, then on-state current increases, but device structure becomes more complex
Solution Approach 1:
The patent applies local quality by creating specific regions with different oxygen concentrations within the oxide semiconductor structure. The first oxide semiconductor layer and second oxide semiconductor layer each have distinct oxygen concentrations tailored to their specific functional requirements, allowing the device to achieve high on-state current through localized optimization without requiring complete restructuring of the entire device.
Solution Approach 2:
The patent uses composite materials by stacking oxide semiconductor layers with different compositions and oxygen concentrations to create a multi-layer composite structure. This composite approach enables the device to achieve high on-state current by combining layers with complementary properties, while the overall structure remains integrated and manageable within the existing semiconductor device architecture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed structure achieves high on-state current, low off-state current, and stable electrical characteristics by effectively managing oxygen and hydrogen, leading to improved reliability and performance of semiconductor devices.
Implementation Method 1
The first oxide semiconductor has an oxygen-transmitting property
Implementation Method 2
a second insulator over the second oxide semiconductor, the first conductor, and the second conductor
Data Source
AI summary
To provide a transistor having a high on-state current. A semiconductor device includes a first insulator containing excess oxygen, a first oxide semiconductor over the first insulator, a second oxide semiconductor over the first oxide semiconductor, a first conductor and a second conductor which are over the second oxide semiconductor and are separated from each other, a third oxide semiconductor in contact with side surfaces of the first oxide semiconductor, a top surface and side surfaces of the second oxide semiconductor, a top surface of the first conductor, and a top surface of the second conductor, a second insulator over the third oxide semiconductor, and a third conductor facing a top surface and side surfaces of the second oxide semiconductor with the second insulator and the third oxide semiconductor therebetween. The first oxide semiconductor has a higher oxygen-transmitting property than the third oxide semiconductor.