Oxide Semiconductor Thin Film Transistor Annealing
Solution Overview
Problem
Oxide semiconductor thin film transistors used in display devices often experience unstable characteristics due to damage from plasma or etchants during manufacturing, leading to non-uniform electrical characteristics and altered threshold voltages.
Innovation Solution
A method of manufacturing oxide semiconductor thin film transistors involving the formation of a passivation layer and an annealing process at temperatures above 100°C, which can last from one hour to several days, using transparent oxide semiconductors like Zinc Oxide or Ga—In—Zn Oxide, and incorporating an etch stop layer and oxygen supply to stabilize the channel layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If plasma or etchant is used during manufacturing, then metal thin film can be deposited and patterned, but the channel layer is damaged causing unstable electrical characteristics
Solution Approach 1:
A passivation layer is formed on the channel layer before subsequent plasma or etchant processing steps. This preliminary protective action prevents damage to the channel layer during metal thin film deposition and patterning, while still allowing the manufacturing processes to proceed. The passivation layer acts as a barrier that preserves electrical characteristics stability.
Solution Approach 2:
The passivation layer serves as an intermediary between the channel layer and the harmful plasma or etchant. It mediates the interaction by absorbing or blocking the harmful effects while allowing the necessary manufacturing processes to occur, thus protecting the channel layer from direct damage.
2Manufacturing precision
If annealing process is performed for one hour or more at 100°C or above, then electrical characteristics uniformity is improved, but manufacturing time increases
Solution Approach 1:
The annealing process parameters (temperature and time) are optimized to achieve the desired electrical characteristics uniformity. By carefully controlling these parameters, the patent achieves improved manufacturing precision while minimizing the time loss associated with the annealing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method significantly improves the uniformity and stability of threshold voltages and electrical characteristics of oxide semiconductor thin film transistors, enhancing their performance in display panel applications.
Implementation Method 1
performing an annealing process for one hour or more at a temperature of about 100° C. or above
Implementation Method 2
a process for supplying oxygen to the channel layer, for example a plasma process
Data Source
AI summary
Provided is a method of manufacturing an oxide semiconductor thin film transistor using a transparent oxide semiconductor as a material for a channel. The method of manufacturing the oxide semiconductor thin film transistor includes forming a passivation layer on a channel layer and performing an annealing process for one hour or more at a temperature of about 100° C. or above.