Oxide Semiconductor TFT Moisture Protection via Dual-Layer Insulation
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Solution Overview
Problem
Oxide semiconductor films in TFTs are degraded by moisture diffusion, leading to reduced TFT characteristics in display devices.
Innovation Solution
A semiconductor device with an oxide semiconductor film is covered by a first insulating film with a low-polarity resin material and a second insulating film with a high-polarity resin material, or a surface modification layer with higher hydrophobicity, to prevent moisture intrusion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an oxide semiconductor film is used in a TFT, then electron mobility increases and off characteristics improve, but the TFT is degraded by moisture diffusion into the oxide semiconductor film
Solution Approach 1:
The patent introduces an insulating film as an intermediary layer between the oxide semiconductor film and the external environment. This insulating film acts as a mediator that blocks moisture diffusion while allowing the oxide semiconductor film to maintain its high electron mobility and favorable off characteristics. The insulating film specifically targets moisture as the harmful factor without interfering with the electrical performance of the TFT.
Solution Approach 2:
The patent creates an inert protective environment by covering the oxide semiconductor film with an insulating film that resists moisture penetration. This forms a protective atmosphere around the sensitive oxide semiconductor film, isolating it from harmful moisture in the external environment while preserving its semiconductor functionality.
2Object-affected harmful factors
If a single insulating film is used to protect the oxide semiconductor film, then moisture protection is provided, but the protection effectiveness is insufficient against both moisture absorption and moisture permeation
Solution Approach 1:
The patent divides the protective insulating structure into multiple segments or layers with different functional characteristics. One layer is designed to resist moisture absorption while another layer resists moisture permeation. This segmented approach allows each layer to specialize in blocking a specific moisture intrusion mechanism, providing comprehensive protection that a single-layer structure cannot achieve.
Solution Approach 2:
The patent employs a composite insulating film structure combining materials with different properties. The composite structure integrates materials that offer low water absorbability with materials that provide low water permeability, creating a synergistic protective system that effectively counters both absorption and permeation pathways of moisture intrusion.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively suppresses moisture intrusion into the oxide semiconductor film, improving TFT characteristics and reliability in display devices.
Implementation Method 1
One material that has lower polarity of the first and second resin materials has low water absorbability
Implementation Method 2
the other material that has higher polarity thereof has low water permeability
Data Source
AI summary
A semiconductor device includes: a transistor including an oxide semiconductor film; a first insulating film covering the oxide semiconductor film and including a first resin material; and a second insulating film including a second resin material that has polarity different from polarity of the first resin material, the second insulating film being laminated on the first insulating film.