Oxide Semiconductor TFT Plasma Treatment for Mobility
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Solution Overview
Problem
Existing methods for manufacturing thin film transistors face challenges in improving charge carrier mobility without changing the semiconductor material, particularly in achieving high mobility at lower annealing temperatures to maintain the amorphous-crystalline structure.
Innovation Solution
A method involving the formation of an amorphous oxide semiconductor layer on a base substrate, followed by plasma treatment using nitrogen or nitric oxide gas to reduce defects, and subsequent annealing at 400°C or less to form a channel layer, which enhances charge carrier mobility without altering the material composition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional annealing methods are used to improve charge carrier mobility, then mobility increases, but annealing temperature must be increased which may alter the amorphous-crystalline structure
Solution Approach 1:
The patent applies plasma treatment to the oxide semiconductor layer before annealing to pre-reduce defects and improve material quality. This preliminary action enables subsequent annealing at lower temperatures (400-600°C) to achieve high charge carrier mobility without requiring excessive heating that would alter the amorphous-crystalline structure
Solution Approach 2:
The patent changes the chemical composition parameters of the oxide semiconductor layer by introducing nitrogen or nitric oxide through plasma treatment. This compositional modification reduces defects and enables improved charge carrier mobility at lower annealing temperatures while preserving the amorphous-crystalline structure
2Reliability
If plasma treatment is applied to reduce defects in oxide semiconductor layer, then charge carrier mobility improves, but additional process steps are required
Solution Approach 1:
The patent combines the plasma treatment step with the existing annealing process by performing plasma treatment immediately before annealing in the same manufacturing sequence. This integration allows defect reduction and structural optimization to occur in a coordinated manner, achieving high mobility without requiring completely separate manufacturing lines
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves charge carrier mobility in thin film transistors by reducing defects through plasma treatment and annealing, while maintaining the amorphous-crystalline structure, thus enhancing the driving speed and reliability of the transistors without increasing manufacturing costs or time.
Implementation Method 1
plasma-treating the oxide semiconductor layer using a plasma generated from a nitrogen gas or a nitric oxide gas to decrease defects in the oxide semiconductor layer
Implementation Method 2
plasma generated from a nitrogen gas or a nitric oxide gas
Implementation Method 3
annealing the plasma-treated oxide semiconductor layer to form a channel layer from the plasma-treated oxide semiconductor layer
Implementation Method 4
annealing is performed at a temperature of about 400° C. or less
Data Source
AI summary
A method of manufacturing a thin film transistor and a method of manufacturing a display substrate having the same are disclosed. In one aspect, the method of manufacturing a thin film transistor comprises forming an oxide semiconductor layer over a substrate, plasma-treating the oxide semiconductor layer with a plasma generated from a nitrogen gas or a nitric oxide gas so as to decrease defects in the oxide semiconductor layer, and annealing the plasma-treated oxide semiconductor layer to form a channel layer.