Light Shielding Material for Oxide Semiconductor TFTs
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Solution Overview
Problem
In displays using oxide semiconductors, ultraviolet light irradiation causes deterioration of thin film transistor (TFT) characteristics due to insufficient light shielding, especially from oblique directions in narrower frame designs.
Innovation Solution
A light shielding material, such as titanium oxide or zinc oxide, is positioned between the resin and the transistor, covering the side and top faces of the TFT and light emitting device to effectively block ultraviolet light from oblique directions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If a light shielding film is provided on the rear face of the substrate, then light incident from the rear side is shielded, but light irradiated from the side direction (oblique direction) cannot be sufficiently shielded
Solution Approach 1:
The patent transitions from one-dimensional light shielding (rear face only) to three-dimensional light shielding by providing light shielding films on multiple surfaces (rear face and side faces) of the substrate. This multi-dimensional approach blocks light paths from all directions, particularly preventing oblique light from entering the oxide semiconductor layer and causing photoinduction effects that would shift threshold voltage.
Solution Approach 2:
The light shielding function is segmented into multiple independent light shielding films positioned at different locations (rear face light shielding film and side face light shielding films). Each segment handles light from specific directions, collectively providing comprehensive protection against light-induced TFT characteristic deterioration.
2Shape
If the distance between terminal section and pixels is shortened for narrower frame design, then display aesthetics are improved, but light from frame region side more easily enters the semiconductor layer causing TFT characteristic deterioration
Solution Approach 1:
Side face light shielding films are introduced as intermediary structures between the frame region and the oxide semiconductor layer. These films intercept and block oblique light paths that would otherwise reach the semiconductor layer through the narrowed frame region, preventing photoinduction effects while maintaining the compact display design.
Solution Approach 2:
The patent adds vertical dimension light shielding by positioning light shielding films on the side faces of the substrate. This creates a three-dimensional light blocking structure that prevents oblique light from the frame region from reaching the semiconductor layer, solving the problem created by shortened frame distances.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly suppresses the incidence of ultraviolet light on the TFT, preventing characteristic shifts and reducing luminance unevenness, thereby maintaining high-quality display performance.
Implementation Method 1
a light shielding material positioned between the resin and the transistor... configured to suppress an incidence of light on the transistor
Data Source
AI summary
A display, a method of manufacturing the display, and an electronic apparatus are provided. The display includes a resin, a transistor; and a light shielding material positioned between the resin and the transistor. The light shielding material is configured to suppress an incidence of light on the transistor. Light is prevented from entering an oxide semiconductor layer to be used as an active layer so as to suppress deterioration of transistor characteristics.