Semiconductor/Solid-State Device Details TRIZ Cases

A porous ceramic heat sink transfers thermal energy from electronic components while blocking high frequency noise generation.

A display substrate uses patterns with different reflectances to create a positioning mark for precise alignment.

A display substrate uses a seed layer and segmented metal injection to form connection terminals without deep holes.

A staggered lead frame structure with exposed metal bumps enables ultra-thin power semiconductor packaging.

Segmented fin plates and spacer plates form a compliant thermal interface that adapts to surface variations, improving thermal coupling efficiency.

Bi-forked swage portions integrate fins with a separate panel, maintaining ventilation paths and reducing thermal resistance.

Dry etching forms substrate grooves while a curved pressing member divides the back film, preventing mechanical chipping and flexural strength loss.

Memory cells switch between SRAM and ROM modes using asymmetrical transistor polarization without altering internal row decoders.

Stacked plate vapor chamber merges nozzle flow paths into the container wall to eliminate external components.

Isolation material with lower Young's modulus balances stress from conductive through silicon vias, preventing wafer warpage under thermal cycling.

Forming a redistribution layer inside a substrate cavity simplifies manufacturing complexity while achieving reliable electrical connectivity.

Half molding exposes concentric lead rows on a planar die paddle, enabling stacked high-frequency packages without complex manufacturing.

Tin solder alloys with copper connectors to form a protective bronze surface for reliable electrical joining.

A chip-exposed semiconductor package exposes the metal backside through a molding compound to reduce parasitic inductance and resistance.

Thinning encapsulated wires creates vertical interconnects between redistribution layers, simplifying manufacturing complexity in 3D stacking.

Premolded cavities constrain semiconductor dies to prevent shift and rotation, ensuring precise alignment for redistribution layers.

Extended storage electrode contact prevents short circuits and reduces resistance, resolving self-align contact failures during high-density integration.

Segmented power lines restore conductivity at intersections without increasing self-resistance, resolving short circuit defects.

Air-knives dispense and agitate an etching solution pool on a semiconductor substrate to remove material layers, avoiding substrate damage from rolling seals.

Plating deposits an identifying mark on wiring metal to maintain conductivity and support miniaturization.

A coaxial transmission line passes through deep trench isolation material to electrically connect conductors across silicon-on-oxide layers.

Localizing the protective film to semiconductor element corners suppresses resin peeling without adding post-dicing adhesive steps.

A radiation-curable pressure-sensitive adhesive layer reduces adhesiveness upon irradiation to enable easy semiconductor element picking.

A lever with a cam member pushes an internal frame to secure heat sinks without tools.

A semiconductor package method uses laser heat to reduce metal oxide layers on solder balls and pads for direct bonding.

Selective barrier layer growth isolates RRAM stacks from peripheral circuits, maintaining high electrode conductivity and minimizing active device area.

Conductive pillars link an optical chip to a soft board, eliminating bulky frames and reducing volume.

Backside magnetic inductors provide localized voltage regulation to resolve conflicts between device density and power efficiency.

Multiple interposers route signals outside restricted areas to overcome pin constraints and increase bandwidth up to 1.0 terabits per second.

A support substrate stabilizes a wafer during thickness reduction while a cutting blade removes the outer chamfered portion from the front side.

Coplanar redistribution layers and frame cavities enable direct mainboard mounting without interposer substrates.

Electroless plating fills photo-cured recesses to form 0.5-10 μm lines, preventing mushroom plating and ensuring uniform current distribution.

Selective liner coating on a semiconductor via reduces electrical resistance and prevents electromigration-induced voiding.

Segmented via openings reduce conductive layer diameter to mitigate thermal expansion cracking and peeling at pad electrodes during solder reflow.

A substrate alignment method uses a fixed mark and stored position data to determine processing coordinates.

A power semiconductor load terminal structure uses a high-hardness support block to mount bonding blocks for stable current transmission.

Segmented lead frames with arc interconnects compensate for thermal expansion and manufacturing tolerances.

Varying bit line contact areas based on pad distance distributes branch currents uniformly, reducing substrate damage from electrostatic discharge events.

Embedding discrete vialess bridge pieces within a main substrate provides dense arrays of signal, power, and ground wires below the surface.

Multilayer redistribution structures with continuous line vias raise allowable current levels while maintaining compact package size and reduced thickness.

A circuit substrate test pad connects lead lines to transparent conductive layers for early electrical verification.

A layered chemical vapor deposited film with controlled oxygen concentration provides strong adhesion to mixed organic and inorganic substrates.

A blocked urethane prepolymer resin composition prevents siloxane volatilization and contact faults in heat-conductive flexible sheets.

A light shielding material positioned between the resin and transistor blocks ultraviolet light incidence on the oxide semiconductor layer.

An offset interposer positions contact pads coplanar with the carrier edge to enable individual integrated circuit testing before final assembly.

Shielding layer and conductive bumps reduce noise interference and voltage errors in multi-chip stacks.

A first electronic component serves as a carrier structure for passive components, enabling smaller system-on-chip designs.

Connecting portions between dual metal back plates distribute stress to prevent circuit board bending and wiring pattern cuts.

A hybrid system-in-package integrates wire-bonded dies onto a redistribution layer carrier to enable fine pitch routing.

Guiding dams channel conductive paste into vertical portions, reducing bezel thickness while maintaining connection reliability.