Power Semiconductor Load Terminal with Nitrogen-Doped Support Block
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Solution Overview
Problem
Power semiconductor devices face challenges in maintaining mechanical robustness and preventing metal diffusion during bonding processes, which can lead to mechanical stress and reliability issues.
Innovation Solution
A power semiconductor device with a load terminal structure comprising a conductive layer, a bonding block, and a support block with a higher hardness than the conductive and bonding blocks, where the bonding block is mounted on the conductive layer via the support block, and a zone with nitrogen atoms is integrated within the conductive or bonding block to enhance mechanical stability and prevent metal diffusion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a bonding block is mounted directly on a conductive layer, then the structure is simpler, but mechanical stress and metal diffusion occur during bonding processes
Solution Approach 1:
A support block is introduced as an intermediary layer between the bonding block and the conductive layer. This support block has higher hardness than both the bonding block and conductive layer, providing mechanical reinforcement during bonding processes and preventing direct contact that would cause stress and metal diffusion.
Solution Approach 2:
The load terminal structure uses a composite arrangement of different materials with specific hardness properties. The support block is made of a material harder than both the bonding block and conductive layer, creating a composite structure that combines the electrical conductivity of the conductive layer with the mechanical strength of the support block.
2Reliability
If bonding processes are performed to establish contact between bond wire and load terminal structure, then electrical connection is achieved, but mechanical stress and metal diffusion are induced
Solution Approach 1:
The support block serves as a mediator that absorbs and distributes the mechanical stress generated during bonding processes. By placing the support block between the bonding block and conductive layer, the harmful mechanical stress is prevented from reaching the conductive layer and bond wire interface.
Solution Approach 2:
The support block is pre-installed on the conductive layer before the bonding process. This beforehand cushioning provides mechanical protection and stress distribution capability prior to the bonding operation, preventing metal diffusion and structural damage during the bonding process.
3Reliability
If bonding processes are performed to establish contact between bond wire and load terminal structure, then electrical connection is achieved, but metal diffusion occurs
Solution Approach 1:
The support block acts as a physical barrier and intermediary layer that prevents direct contact between the bonding block and conductive layer during bonding processes. This separation eliminates the pathway for metal diffusion while maintaining the electrical connection function through the support block's conductivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides enhanced mechanical robustness and prevents metal diffusion, improving the reliability and performance of power semiconductor devices by reducing mechanical stress and ensuring effective load current transmission.
Implementation Method 1
a zone that is arranged within at least one of the conductive layer and the bonding block, the zone exhibiting nitrogen atoms
Data Source
AI summary
A power semiconductor device, a power semiconductor module and a power semiconductor device processing method are provided. The power semiconductor device includes a first load terminal structure, a second load terminal structure, and a semiconductor structure electrically coupled to each load terminal structure and configured to carry a load current. The first load terminal structure includes a conductive layer in contact with the semiconductor structure, a bonding block configured to be contacted by at least one bond wire and to receive at least a part of the load current from the at least one bond wire and/or the conductive layer, a support block having a hardness greater than the hardness of the conductive layer and the bonding block. The bonding block is mounted on the conductive layer via the support block, and a zone is arranged within the conductive layer and/or the bonding block, the zone exhibiting nitrogen atoms.