Oxide Semiconductor Thin Film Transistor Oxygen-Rich Transition Layer
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Solution Overview
Problem
The stability of indium gallium zinc oxide (IGZO) thin film transistors is compromised due to poor interface characteristics and crystal lattice mismatch between the IGZO semiconductor layer and the gate insulating and blocking layers, which are sensitive to oxygen and moisture.
Innovation Solution
A first transition layer with a higher oxygen content is formed between the gate insulating layer and the oxide semiconductor layer, and optionally between the blocking layer and the oxide semiconductor layer, to enhance the interface characteristics and stability by controlling the oxygen content during deposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a traditional etch blocking structure with SiNx or SiOx layer is used on the IGZO layer, then the IGZO layer is protected during source/drain electrode fabrication, but the interface characteristic and crystal lattice match between the IGZO semiconductor layer and the blocking layer remains poor
Solution Approach 1:
An oxygen-rich transition layer is introduced as an intermediary between the gate insulating layer and the oxide semiconductor layer. This transition layer serves as a mediator that improves the interface characteristics and crystal lattice matching, thereby resolving the contradiction between protecting the IGZO layer and achieving good interface characteristics.
Solution Approach 2:
The oxygen content parameter is changed by creating an oxygen-rich transition layer with higher oxygen concentration than the adjacent oxide semiconductor layer. This parameter change (oxygen content gradient) improves the interface characteristics and crystal lattice match while maintaining the protective function of the blocking layer.
2Adaptability or versatility
If the IGZO thin film transistor is used for flexible substrate due to good flexible property and low processing temperature, then it is suitable for flexible display applications, but the substrate has poor stability in air and is sensitive to oxygen and moisture
Solution Approach 1:
An oxygen-rich transition layer is created to provide a protective environment at the interface between the gate insulating layer and the oxide semiconductor layer. This layer acts as a barrier against oxygen and moisture penetration, thereby improving the air stability of the IGZO thin film transistor while maintaining its flexible properties.
Solution Approach 2:
The oxygen-rich transition layer is formed in advance during the manufacturing process to provide preemptive protection against oxygen and moisture degradation. This prior cushioning layer prevents harmful substances from reaching and deteriorating the oxide semiconductor layer, thereby improving long-term stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves the stability and crystal lattice matching between the oxide semiconductor and gate insulating/blocking layers, leading to enhanced electrical properties and improved display device performance.
Implementation Method 1
forming a first transition layer on the gate insulating layer; forming an oxide semiconductor layer on the first transition layer, the oxygen content of the first transition layer is higher than the oxygen content of the oxide semiconductor layer
Data Source
AI summary
An oxide semiconductor thin film transistor, a manufacturing method and a display device thereof are disclosed. An oxide semiconductor thin film transistor comprises a gate insulating layer (22), an oxide semiconductor layer (24) and a blocking layer (25), wherein a first transition layer (23) is formed between the gate insulating layer (22) and the oxide semiconductor layer (24), the oxygen content of the first transition layer (23) is higher than the oxygen content of the oxide semiconductor layer (24). The oxide semiconductor thin film transistor enhances the interface characteristic and the lattice matching between the oxide semiconductor layer (24) and the blocking layer (25) to improve the stability of the thin film transistor better.