Oxide Semiconductor Transistor Composition for Display Etching
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Solution Overview
Problem
The challenge lies in manufacturing semiconductor devices that utilize oxide semiconductors with different materials for transistors in display devices, as these materials have varying chemical resistance to acids, making it difficult to produce multiple transistors with distinct channel materials without affecting light sensitivity and mobility requirements.
Innovation Solution
A semiconductor device design that incorporates a first transistor with a Sn-containing oxide semiconductor layer for the drive circuit and a second transistor with a Sn-free oxide semiconductor layer for the pixel circuit, each having different compositions and etching resistances, allowing for selective etching and addressing light sensitivity and mobility needs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If oxide semiconductors with different materials are used for transistors in display devices, then light sensitivity and mobility requirements can be addressed, but manufacturing difficulty increases due to varying chemical resistance to acids
Solution Approach 1:
The patent applies local quality by using different oxide semiconductor materials in different regions of the device. Specifically, the pixel circuit uses an oxide semiconductor with high chemical resistance (e.g., In-Ga-Zn-O with specific composition ratios) to resist acid etching, while the drive circuit uses an oxide semiconductor with high mobility (e.g., In-O or In-Ga-O). This allows each region to have optimized material properties matching its functional requirements without compromising manufacturing feasibility.
Solution Approach 2:
The patent utilizes parameter changes by adjusting the composition ratios of oxide semiconductor materials. By varying the atomic ratios of elements like In, Ga, Zn, and O, the patent optimizes both chemical resistance and mobility parameters. For example, changing the In:Ga:Zn ratio allows tuning of etching resistance while maintaining acceptable mobility, and adjusting oxygen content or stoichiometry modifies carrier mobility without completely sacrificing chemical stability.
2Reliability
If oxide semiconductors with different materials are used for pixel circuit and drive circuit transistors, then specific performance requirements can be met, but etching process complexity increases
Solution Approach 1:
The patent implements local quality by assigning different oxide semiconductor compositions to different circuit regions. The pixel circuit transistor uses an oxide semiconductor formulation optimized for acid resistance, while the drive circuit transistor uses a formulation optimized for mobility. This spatial differentiation of material properties allows the etching process to be simplified, as each region's material is specifically tailored to respond appropriately to the etching conditions without requiring overly complex multi-step etching sequences.
Data Source
AI summary
A semiconductor device including a substrate, a first insulating layer above the substrate, a first transistor including a first oxide semiconductor layer above the first insulating layer, and a second transistor including a second oxide semiconductor layer above the first insulating layer, a composition of the second oxide semiconductor layer being different from a composition of the first oxide semiconductor layer.