Oxide-Silicon Transistor Display Panel for Low-Frequency Flicker
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Solution Overview
Problem
Silicon-based OLED display panels experience display flickering due to high off-state current and leakage current under low-frequency driving, which is exacerbated by the single-crystal silicon material in the pixel circuit.
Innovation Solution
A display panel design incorporating a silicon substrate with a single-crystal silicon transistor and an oxide transistor layer, where the oxide transistor is electrically connected to the single-crystal silicon transistor, reducing leakage current and enabling low-frequency driving without flickering.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a single-crystal silicon active layer is used in the silicon-based OLED display panel, then the pixel circuit can be directly placed on a silicon wafer with wafer process to increase PPI and reduce physical size, but the off-state current increases causing display flickering under low-frequency driving
Solution Approach 1:
The patent divides the transistor functionality into two separate components: a single-crystal silicon transistor for high-performance switching and an oxide transistor for low-leakage current compensation. This segmentation allows each component to optimize for its specific function while working together to resolve the contradiction between high PPI capability and low leakage current.
Solution Approach 2:
The patent combines single-crystal silicon and oxide materials in a composite transistor structure. The single-crystal silicon active layer provides high mobility and switching performance, while the oxide layer provides low leakage current characteristics. This composite approach enables both high PPI and low leakage current simultaneously.
2Reliability
If the oxide transistor layer is disposed on a side of the silicon substrate, then the leakage current is reduced for low-frequency driving, but the device structure becomes more complex
Solution Approach 1:
The patent transitions from a planar two-dimensional structure to a three-dimensional stacked structure by placing the oxide transistor layer on the side of the silicon substrate. This vertical arrangement reduces leakage current paths while managing the increased structural complexity through systematic layer stacking and integration.
Data Source
AI summary
A display panel includes a silicon substrate and an oxide transistor layer disposed on a side of the silicon substrate. The silicon substrate includes a single-crystal silicon transistor, and the oxide transistor layer includes an oxide transistor electrically connected to the single-crystal silicon transistor.