Oxide Semiconductor Composition Stabilizer Low-Temperature Annealing
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Solution Overview
Problem
The formation of oxide semiconductor thin films with high mobility and reliability using conventional solution processes requires high-temperature annealing above 450°C, which is challenging for large-sized glass and plastic substrates due to substrate transformation and application difficulties.
Innovation Solution
A composition for oxide thin films including a zinc compound, a second compound from a group of indium, tin, gallium, etc., and a stabilizer, with the stabilizer's mole number being two to twelve times greater than the total mole number of the first and second compounds, allowing for low-temperature annealing between 100 to 450°C, enabling the formation of high-mobility and reliable oxide semiconductor thin films on flexible or glass substrates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high-temperature annealing above 450°C is used in conventional solution processes, then oxide semiconductor thin films with high mobility and reliability can be formed, but substrate transformation occurs and application to large-sized glass and plastic substrates becomes difficult
Solution Approach 1:
The patent changes the chemical composition parameters of the solution by introducing a stabilizer compound in addition to the traditional metal organic compounds. This compositional parameter change enables the annealing process to occur at lower temperatures (below 450°C) while still achieving high mobility and reliability in the oxide semiconductor thin film, thus resolving the contradiction between film quality and substrate temperature tolerance
Solution Approach 2:
The stabilizer acts as an intermediary substance that facilitates the formation of high-quality oxide semiconductor films at lower temperatures. It mediates between the metal organic compounds and the substrate, enabling proper film formation without requiring extreme temperatures that would damage the substrate, thus allowing application to both glass and plastic substrates
2Adaptability or versatility
If low-temperature annealing between 100 to 450°C is used, then substrate transformation is avoided and application to large-sized glass and plastic substrates is enabled, but formation of high-mobility and high-reliability oxide semiconductor thin films becomes challenging
Solution Approach 1:
The patent creates a composite solution composition containing multiple components: metal organic compounds (providing In, Zn, Ga, Al) and a stabilizer compound. This composite material approach allows the system to achieve both low-temperature processing (enabling substrate versatility) and high film quality (maintaining reliability), as the stabilizer component compensates for the reduced thermal energy available at lower annealing temperatures
3Ease of manufacture
If conventional solution processes are used, then low-cost fabrication is achieved, but high-temperature annealing above 450°C is required which limits substrate choices
Solution Approach 1:
By modifying the solution composition parameters (adding stabilizer) rather than changing the fundamental solution process methodology, the patent maintains the cost advantages of solution processing while eliminating the need for high-temperature annealing, thus preserving ease of manufacture without the temperature-related drawbacks
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the fabrication of high-quality oxide semiconductor thin films at lower temperatures, improving on-current and reducing trap sites, thus enhancing the reliability and mobility of thin film transistors, comparable to high-temperature annealing processes, while being applicable to large-sized glass or plastic substrates.
Implementation Method 1
a stabilizer for adjusting conductivity
Implementation Method 2
annealing the substrate with the coated composition at a temperature ranging from 100 to 450° C.
Implementation Method 3
coating a composition for an oxide thin film on a substrate
Data Source
AI summary
Provided are a composition for an oxide semiconductor, a preparation method of the composition, a method for forming an oxide semiconductor thin film using the composition, and a method for forming an electronic device using the composition. The composition for an oxide semiconductor includes a compound for an oxide thin film and a stabilizer for adjusting conductivity of the oxide thin film. The stabilizer is included with the mole number of two to twelve times larger than the total mole number of the compound.