Oxide TFT Oxygen Release Layer for Stability
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Solution Overview
Problem
Oxide thin film transistors face reliability issues due to oxygen vacancy defects, leading to poor stability under positive bias temperature stress, which affects the operation of gate driver and pixel driving circuits, especially in high-resolution and high-refresh-rate display panels.
Innovation Solution
A thin film transistor structure incorporating a first loose layer and a first oxygen release layer with different porosities and oxygen contents, where the oxygen release layer is in contact with the loose layer, allowing oxygen to be transferred to the active layer to fill vacancies, thereby enhancing stability and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If oxide thin film transistors are used in high-resolution and high-refresh-rate display panels, then display performance is improved, but reliability deteriorates due to oxygen vacancy defects and poor stability under positive bias temperature stress
Solution Approach 1:
The patent applies preliminary action by forming an oxygen release layer beneath the active layer that pre-stores oxygen in advance. During subsequent processing and operation, this pre-stored oxygen is gradually released to fill oxygen vacancies in the active layer, preventing reliability degradation before it occurs. This is achieved by depositing the oxygen release layer containing excess oxygen that diffuses into the active layer during device operation.
Solution Approach 2:
The patent introduces an oxygen release layer as an intermediary between the substrate and the active layer. This intermediary layer serves as an oxygen reservoir that mediates the oxygen supply to the active layer, filling oxygen vacancies and improving transistor stability. The oxygen release layer acts as a buffer that continuously replenishes oxygen to the active layer during device operation.
2Ease of manufacture
If oxygen vacancies are present in the active layer, then manufacturing is easier, but device stability under positive bias temperature stress deteriorates
Solution Approach 1:
The patent implements self-service by enabling the oxygen release layer to automatically release oxygen to the active layer when oxygen vacancies occur. The oxygen release layer contains excess oxygen that spontaneously diffuses into the active layer during device operation and stress conditions, eliminating the need for external intervention to repair oxygen vacancies. This self-healing mechanism maintains device stability without additional processing steps.
3Reliability
If oxygen release layer with high porosity is used to release oxygen, then oxygen supply to active layer is improved, but structural integrity and manufacturing precision may deteriorate
Solution Approach 1:
The patent employs porous materials by forming an oxygen release layer with controlled porosity that facilitates oxygen diffusion to the active layer. The porous structure provides channels for oxygen to escape from the oxygen release layer and reach the active layer, improving oxygen supply efficiency. The porosity is optimized to balance oxygen release capability with structural integrity and manufacturability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed structure improves the stability of oxide thin film transistors by reducing oxygen vacancies, leading to enhanced reliability and performance in high-resolution and high-refresh-rate display panels.
Implementation Method 1
a first oxygen release layer, wherein the first oxygen release layer is disposed on a surface of the first loose layer facing away from the active layer, and is in contact with the first loose layer, wherein a material of the first oxygen release layer is a first oxygen-containing insulating material
Implementation Method 2
the porosity of the first loose layer is capable of being represented by: after being immersed in an etching solution, the first loose layer having pores with a size range of 30 nm to 150 nm
Data Source
AI summary
A thin film transistor includes an active layer, a first loose layer and a first oxygen release layer. The first loose layer is at least disposed on a first surface of the active layer perpendicular to a thickness direction of the active layer, and is in contact with the active layer. A material of the first loose layer includes a first inorganic oxide insulating material. The first oxygen release layer is disposed on a surface of the first loose layer facing away from the active layer, and is in contact with the first loose layer. A material of the first oxygen release layer is a first oxygen-containing insulating material. A porosity of the first loose layer is different from a porosity of the first oxygen release layer, and/or an oxygen content of the first loose layer is different from an oxygen content of the first oxygen release layer.