Oxide TFT UV Barrier Layer for Threshold Voltage Stability
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Solution Overview
Problem
Oxide thin film transistors (TFTs) face stability issues due to UV irradiation, which causes threshold voltage shifts and device failure, as they absorb short-wavelength UV rays, making it difficult to maintain long-term stability under light exposure.
Innovation Solution
Incorporating an ultraviolet barrier layer made of a resin material with ultraviolet absorbents, such as salicylates, benzophenones, or triazines, on the oxide active layer to block UV light, enhancing the stability of the oxide TFTs by preventing UV impact.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If oxide semiconductor is used as active layer material, then carrier mobility is improved and fabrication temperature is reduced, but stability under UV irradiation deteriorates
Solution Approach 1:
An ultraviolet barrier layer is introduced as an intermediary component between the UV environment and the oxide active layer. This barrier layer absorbs UV radiation before it reaches the oxide semiconductor, preventing photogenerated hole injection and threshold voltage shifts while allowing the oxide TFT to maintain its high carrier mobility advantages
Solution Approach 2:
The patent employs composite material structures by combining the oxide active layer with an ultraviolet barrier layer made of resin materials containing UV absorbents. This composite structure leverages the high carrier mobility of oxide semiconductors while adding UV protection functionality through the barrier layer
2Object-affected harmful factors
If oxide semiconductor absorbs short-wavelength UV rays, then UV protection is improved, but threshold voltage stability deteriorates
Solution Approach 1:
The harmful UV absorption function is extracted from the oxide active layer and transferred to a dedicated ultraviolet barrier layer. This separation allows the oxide semiconductor to maintain its electrical properties while the barrier layer handles UV absorption, preventing threshold voltage instability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The ultraviolet barrier layer effectively blocks UV light, preventing threshold voltage shifts and improving the long-term stability of oxide TFTs, thereby extending their operational lifespan and maintaining their transparent characteristics.
Implementation Method 1
the ultraviolet barrier layer is made of a resin material comprising an ultraviolet absorbent
Data Source
AI summary
An oxide thin film transistor, an array substrate, methods of manufacturing the same and a display device are disclosed. The oxide thin film transistor includes: a base substrate; and a gate electrode, a gate insulating layer, an oxide active layer, drain/source electrodes sequentially disposed on the base substrate. The oxide TFT transistor further includes an ultraviolet barrier layer disposed on the oxide active layer, the ultraviolet barrier layer is made of a resin material contains an ultraviolet absorbent. The stability of the oxide TFT is enhanced by disposing the ultraviolet barrier layer over the oxide active layer of the oxide TFT, since the ultraviolet barrier layer blocks the impact of UV light on the oxide TFT.