Metal Oxide Transistor Composition for Mobility and Bias-Stress Reliability
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Solution Overview
Problem
Current semiconductor devices using metal oxide transistors face challenges in achieving stable and reliable electrical characteristics, particularly in maintaining high field-effect mobility and reliability against positive bias stress and light irradiation, due to limitations in transistor design and material composition.
Innovation Solution
A semiconductor device is designed with two types of transistors, each with distinct semiconductor layers composed of metal oxides with varying indium and element M (gallium, aluminum, yttrium, tin) ratios, optimized for different applications, such as high-speed switching and high-resolution displays, to enhance electrical characteristics and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a single type of metal oxide semiconductor layer is used in transistors, then the device structure is simple, but the electrical characteristics and reliability under different conditions cannot be optimized simultaneously
Solution Approach 1:
The patent applies local quality by using different metal oxide semiconductor layers with specific compositions in different transistor regions. The first transistor uses a metal oxide layer optimized for positive bias stress resistance, while the second transistor uses a different metal oxide layer optimized for light irradiation resistance, allowing each region to have properties tailored to its specific operational requirements
Solution Approach 2:
The patent segments the semiconductor device into multiple transistor types with different semiconductor layer compositions. By dividing the device into distinct regions with specialized materials, the patent achieves simultaneous optimization for multiple stress conditions that would be impossible with a uniform material composition throughout
2Speed
If metal oxide transistors are used to achieve high field-effect mobility, then switching speed is improved, but stability against positive bias stress and light irradiation deteriorates
Solution Approach 1:
The patent changes material parameters by selecting different metal oxide compositions for different transistor applications. By adjusting the atomic ratios of metal elements in the oxide layers, the patent optimizes field-effect mobility for high-speed switching while simultaneously achieving stability against positive bias stress and light irradiation through compositional variation
Data Source
AI summary
A semiconductor device with favorable electrical characteristics is to be provided. A semiconductor device with high reliability is to be provided. The semiconductor device includes a first transistor and a second transistor. The first transistor includes a first semiconductor layer, a first insulating layer, a second insulating layer, and a first gate electrode that are stacked in this order. The first gate electrode includes a region overlapping with the first semiconductor layer. The second transistor includes a second semiconductor layer, a second insulating layer, and a second gate electrode that are stacked in this order. The second gate electrode includes a region overlapping with the second semiconductor layer.