Oxide Semiconductor Transistor Wiring with Copper Barrier Films
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Solution Overview
Problem
Existing techniques for manufacturing transistors using oxide semiconductor films face challenges with signal delay due to wiring resistance and copper element diffusion, which affect display quality and stability in high-definition and large-screen display devices.
Innovation Solution
A method involving a bottom-gate transistor structure with source and drain electrodes formed using a layered metal film configuration, including a copper-containing second metal film covered by tungsten and tantalum nitride films to prevent copper diffusion, along with oxygen-excess insulating films and aluminum oxide layers to enhance adhesion and reduce signal delay.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If screen size is increased in display devices, then display area is improved, but wiring resistance increases causing display unevenness and grayscale defects
Solution Approach 1:
The patent uses composite wiring materials with copper film combined with barrier and adhesion promotion films to achieve low resistance over large areas. This allows the display device to maintain large screen size while ensuring uniform wiring resistance across the entire display area, preventing display unevenness and grayscale defects.
2Manufacturing precision
If resolution is improved in display devices, then image quality is enhanced, but driving frequency increases requiring lower resistance wiring
Solution Approach 1:
The patent implements composite wiring structures with copper film layers that provide low resistance, combined with barrier films to prevent diffusion. This enables the display device to support high resolution by maintaining low signal delay even at increased driving frequencies required for HD and FHD image quality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides transistors with stable electric characteristics and reduced signal delay, enabling high-performance display devices with improved display quality and reliability.
Implementation Method 1
The source electrode and the drain electrode each include a first metal film, a second metal film, and a third metal film. The second metal film uses a material containing a copper element. By covering the copper-containing second metal film with tungsten nitride and tantalum nitride films, copper element diffusion into the oxide semiconductor film is prevented.
Implementation Method 2
oxygen-excess insulating films and aluminum oxide layers to enhance adhesion and reduce signal delay
Data Source
AI summary
A method for manufacturing a transistor with stable electric characteristics and little signal delay due to wiring resistance, used in a semiconductor device including an oxide semiconductor film. A semiconductor device including the transistor is provided. A high-performance display device including the transistor is provided.