Oxide Semiconductor Transistor Structure for High-Frequency Operation
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Solution Overview
Problem
Current transistors with oxide semiconductors face challenges in achieving low parasitic capacitance, high frequency characteristics, and stable electrical performance, particularly in off-state current and high-speed operation.
Innovation Solution
A transistor design incorporating an oxide semiconductor with specific conductor and insulator configurations, including overlapping regions and a surrounded channel structure, to reduce parasitic capacitance and enhance electrical characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If a transistor includes an oxide semiconductor with conventional conductor and insulator configurations, then the transistor can be manufactured with existing equipment, but the parasitic capacitance is high and frequency characteristics are poor
Solution Approach 1:
The conductor is divided into multiple regions (first region, second region, third region) with different functions. The first region overlaps with the oxide semiconductor for gate control, while the second and third regions overlap with source/drain conductors for capacitance reduction. This segmentation allows optimization of frequency characteristics without excessive complexity.
Solution Approach 2:
The patent introduces overlapping regions in the planar dimension where the first conductor overlaps with the oxide semiconductor and with the source/drain conductors. This dimensional arrangement reduces parasitic capacitance between gate and source/drain regions, improving frequency characteristics without requiring vertical stacking complexity.
2Reliability
If the transistor uses a surrounded channel structure with overlapping regions, then parasitic capacitance is reduced, but the manufacturing process becomes more complex
Solution Approach 1:
The first conductor is formed as a single continuous layer that simultaneously serves as the gate electrode and creates overlapping regions with source/drain conductors. This merging of functions into a single conductor structure reduces manufacturing steps while achieving the surrounded channel effect and low parasitic capacitance.
Solution Approach 2:
The first conductor performs multiple functions: it acts as the gate electrode for channel control, creates overlapping regions for capacitance reduction, and provides electrical connection. This multi-functionality simplifies the overall device structure while maintaining reliable electrical characteristics.
3Speed
If the first conductor overlaps with source and drain conductors with insulators positioned therebetween, then parasitic capacitance is reduced, but the device structure becomes more complex
Solution Approach 1:
The first insulator and second insulator serve as intermediary layers positioned between the first conductor and source/drain conductors. These insulator layers act as spacers that define the overlapping regions and control the parasitic capacitance, enabling high-speed operation without excessive structural complexity.
Data Source
AI summary
A transistor with small parasitic capacitance can be provided. A transistor with high frequency characteristics can be provided. A semiconductor device including the transistor can be provided. Provided is a transistor including an oxide semiconductor, a first conductor, a second conductor, a third conductor, a first insulator, and a second insulator. The first conductor has a first region where the first conductor overlaps with the oxide semiconductor with the first insulator positioned therebetween; a second region where the first conductor overlaps with the second conductor with the first and second insulators positioned therebetween; and a third region where the first conductor overlaps with the third conductor with the first and second insulators positioned therebetween. The oxide semiconductor including a fourth region where the oxide semiconductor is in contact with the second conductor; and a fifth region where the oxide semiconductor is in contact with the third conductor.