Oxide Semiconductor Transistor Fabrication for Oxygen Diffusion Control
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving consistent transistor characteristics, high reliability, favorable electrical properties, high on-state current, miniaturization, and low power consumption due to variations in oxide semiconductor materials and oxygen diffusion issues.
Innovation Solution
A method involving the deposition of a first insulator, a stacked body of oxides and conductors, and subsequent oxygen ion implantation and heat treatment to form a CAAC-OS structure, with specific angles and gas atmospheres to inhibit oxygen diffusion and enhance crystallinity, is employed to create a semiconductor device with improved transistor performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If oxide semiconductor materials are used to form transistors, then the devices can achieve low power consumption and favorable electrical characteristics, but variations in transistor characteristics occur due to material inconsistencies and oxygen diffusion
Solution Approach 1:
The patent applies preliminary action by performing oxygen ion implantation and heat treatment before final device operation to pre-stabilize the oxide semiconductor layer. This preventive treatment addresses oxygen deficiency and compositional variations before they can cause transistor characteristic variations during operation.
Solution Approach 2:
The patent changes physical and chemical parameters of the oxide semiconductor through controlled oxygen ion implantation and heat treatment processes. By adjusting oxygen concentration, temperature, and ion energy parameters, the method optimizes the semiconductor layer composition to reduce variations in transistor characteristics.
2Reliability
If oxygen diffusion is not controlled, then the manufacturing process is simpler, but oxygen diffusion causes variations in transistor characteristics and reduces reliability
Solution Approach 1:
The patent introduces oxygen ions as an intermediary substance to control oxygen distribution in the oxide semiconductor layer. The oxygen ion implantation process acts as a mediator to precisely deliver oxygen to specific regions, preventing uncontrolled oxygen diffusion while maintaining manufacturing feasibility.
Solution Approach 2:
The patent uses oxygen ion implantation as an accelerated oxidation method to rapidly supply oxygen to the oxide semiconductor layer. This strong oxidizing approach efficiently compensates for oxygen deficiency and stabilizes the material composition without requiring prolonged thermal processing.
3Productivity
If conventional transistor manufacturing methods are used, then the process is established and straightforward, but the devices cannot achieve high on-state current and miniaturization
Solution Approach 1:
The patent performs preliminary oxygen ion implantation and heat treatment to pre-optimize the oxide semiconductor layer properties before transistor fabrication. This advance preparation enables better control over transistor characteristics, facilitating both high on-state current and miniaturization in subsequent processing steps.
Solution Approach 2:
The patent changes the physical and chemical parameters of the oxide semiconductor through controlled oxygen ion implantation and heat treatment. By optimizing oxygen concentration, crystallinity, and material composition parameters, the method enables enhanced transistor performance including higher on-state current and improved suitability for miniaturization.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The approach results in a semiconductor device with reduced variations in transistor characteristics, high reliability, enhanced electrical properties, increased on-state current, and low power consumption, enabling miniaturization and high integration while maintaining stable electrical performance.
Implementation Method 1
a first oxide film is deposited in contact with a side surface of the first oxide and top and side surfaces of the second oxide
Implementation Method 2
oxygen addition treatment is performed on the vicinity of an interface between the second oxide and the first oxide film through the first oxide film
Implementation Method 3
heat treatment is performed
Implementation Method 4
to form a CAAC-OS structure
Implementation Method 5
parts of the first conductive film, the first insulating film, the first oxide film, and the second insulator are removed by chemical polishing treatment
Data Source
AI summary
To provide a semiconductor device with less variations, a first insulator is deposited; a stack of first and second oxides and a first conductor is formed over the first insulator; a second insulator is formed over the first insulator and the stack; an opening is formed in the second insulator; a top surface of the second oxide is exposed by removing a region of the first conductor, second and third conductors are formed over the second oxide, and then cleaning is performed; a first oxide film is deposited in contact with a side surface of the first oxide and top and side surfaces of the second oxide; heat treatment is performed on an interface between the second oxide and the first oxide film through the first oxide film; and the second insulator is exposed and a fourth conductor, a third insulator, and a third oxide are formed in the opening.