Oxide Semiconductor Wiring Structure With Local Doping for Transmittance
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Solution Overview
Problem
Conventional oxide semiconductors have high resistivity, making it difficult to use them as wiring materials in electronic devices, particularly in display devices where low resistance and high transmittance are required.
Innovation Solution
A semiconductor device is developed using a polycrystalline oxide semiconductor layer with impurity elements added to specific portions, reducing resistance and enabling its use as a wiring material by forming a low-resistance conductive portion without adding impurities to overlapping regions, thereby improving the device's performance and transmittance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If impurity elements are added to the oxide semiconductor layer, then electrical conductivity is improved, but light transmittance deteriorates
Solution Approach 1:
The patent applies local quality by adding impurity elements only to specific regions of the oxide semiconductor layer where high conductivity is needed (source and drain regions), while keeping the channel region free of impurities to maintain light transmittance. This is achieved through selective ion implantation or doping processes that target only the necessary areas, allowing different parts of the same layer to have different electrical properties.
Solution Approach 2:
The oxide semiconductor layer is segmented into functionally distinct regions: a channel region for transistor operation and source/drain regions for electrical connection. By segmenting the layer and applying impurity addition only to the source/drain segments, the patent achieves high conductivity where needed without compromising the optical properties of the channel region that requires light transmittance for display applications.
2Reliability
If the oxide semiconductor layer is made highly conductive, then it can be used as wiring material, but the resistivity reduction process complicates the device structure
Solution Approach 1:
The patent makes the oxide semiconductor layer multi-functional by enabling it to serve both as an active layer for transistor operation and as a conductive wiring material. Through selective impurity addition, the same oxide semiconductor layer provides both semiconductor functionality in the channel region and low-resistance conduction in the source/drain regions, eliminating the need for separate wiring layers and simplifying the overall device structure.
Solution Approach 2:
The patent changes the electrical parameters of the oxide semiconductor layer by controlling impurity concentration and distribution. By adjusting the impurity addition parameters (type, concentration, and spatial distribution), the material transitions from a high-resistivity semiconductor to a low-resistivity conductive material in specific regions, enabling wiring functionality without fundamentally changing the material system or device architecture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces the resistivity of the oxide semiconductor layer to levels suitable for use as a wiring material, enhancing the display device's performance and aperture ratio while maintaining light transmittance.
Implementation Method 1
performing an ion implantation from above the first conductive layer and the resist mask to add impurity elements to a portion of the first oxide semiconductor layer
Data Source
AI summary
An electronic device comprises a first stacked structure including a first oxide semiconductor layer having a polycrystalline structure, a first insulating layer on the first oxide semiconductor layer, and a first conductive layer overlapping the first oxide semiconductor layer via the first insulating layer; and a second stacked structure including a second oxide semiconductor layer composed of the same layer as the first oxide semiconductor layer, the first insulating layer on the second oxide semiconductor layer, and a second conductive layer overlapping the second oxide semiconductor layer via the first insulating layer and composed of the same layer as the first conductive layer. A portion of the first oxide semiconductor layer not overlapping the first conductive layer contains an impurity element, and the second oxide semiconductor layer does not contain the impurity element.