Oxidized Tungsten-Silicon Capacitor Structure for Low-Parasitic Transistors
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing transistors face challenges in miniaturization, high parasitic capacitance, low frequency characteristics, unstable electrical properties, and high off-state current, which hinder their integration and performance in semiconductor devices.
Innovation Solution
A capacitor structure is introduced with a first conductor made of tungsten and silicon, overlapped by a second conductor with a silicon oxide film as the insulator, and integrated with a transistor to reduce parasitic capacitance and enhance electrical characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If conventional transistor structures are used, then manufacturing is simpler, but parasitic capacitance increases and frequency characteristics deteriorate
Solution Approach 1:
The transistor structure is divided into multiple functional regions including a first conductor region, a second conductor region, and an insulator region with specific overlapping relationships. This segmentation allows reduction of parasitic capacitance while maintaining manufacturability through defined spatial zones.
Solution Approach 2:
The patent introduces vertical stacking of conductor and insulator regions to create three-dimensional overlapping structures. This dimensional approach reduces parasitic capacitance by separating electrical paths in the vertical dimension while maintaining planar footprint for integration.
2Area of moving object
If transistor size is reduced for miniaturization, then integration density improves, but electrical characteristics and stability worsen
Solution Approach 1:
The insulator region is nested within the overlapping area of the first and second conductor regions, creating a compact structure where the insulator is positioned to specifically reduce parasitic capacitance without increasing the overall transistor footprint.
Solution Approach 2:
The patent optimizes the thickness and material composition of the insulator region, and the overlapping dimensions of conductor regions, to achieve reduced parasitic capacitance while maintaining stable electrical characteristics in miniaturized transistors.
3Device complexity
If conventional capacitor structures are used, then manufacturing is simpler, but parasitic capacitance increases affecting transistor performance
Solution Approach 1:
The capacitor structure is merged with the transistor structure by forming the first conductor, second conductor, and insulator region as an integrated unit. This merging eliminates separate capacitor components and their associated parasitic capacitances while maintaining the capacitive function within the transistor structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides a miniaturized transistor with low parasitic capacitance, high frequency characteristics, stable electrical properties, and low off-state current, enabling high-speed operation and integration in semiconductor devices.
Implementation Method 1
the insulator includes a silicon oxide film formed by oxidizing the first conductor
Data Source
AI summary
A miniaturized transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A transistor having a large amount of on-state current is provided. A semiconductor device including the transistor is provided. A semiconductor device with high integration is provided. A novel capacitor is provided. The capacitor includes a first conductor, a second conductor, and an insulator. The first conductor includes a region overlapping with the second conductor with the insulator provided therebetween. The first conductor includes tungsten and silicon. The insulator includes a silicon oxide film that is formed by oxidizing the first conductor.