Oxygen Delivery Apparatus for Copper I Suppression in Electroplating
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Solution Overview
Problem
Conventional electroplating technologies face challenges in reducing copper (I) ion concentration, leading to hillock formation during semiconductor processing, which is difficult to address without increasing manufacturing costs and process queue times.
Innovation Solution
Incorporating an oxygen-delivery apparatus into the electroplating system to maintain a dissolved oxygen concentration above 10 ppm, allowing for reduced copper (I) formation while maintaining normal operating temperatures and current loads, thereby minimizing adjustments to bath chemistries.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional electroplating is used to reduce copper (I) ion concentration, then hillock formation is reduced, but manufacturing costs and process queue times increase
Solution Approach 1:
The patent changes the chemical parameter of dissolved oxygen concentration in the electrolyte from conventional low levels to above 10 ppm. This parameter change modifies the electrochemical environment to suppress copper (I) ion formation, thereby reducing hillock formation without requiring additional processing steps or increasing manufacturing costs
Solution Approach 2:
Dissolved oxygen acts as an intermediary substance that mediates the electrochemical reactions in the electrolyte. By maintaining high dissolved oxygen levels, the system introduces a chemical mediator that alters the reaction pathways, preventing copper (I) ion formation and subsequent hillock formation while maintaining normal plating operations
2Manufacturing precision
If dissolved oxygen concentration is maintained above 10 ppm, then copper (I) formation is reduced, but system complexity increases due to oxygen-delivery apparatus
Solution Approach 1:
The system uses readily available oxygen from air or oxygen tanks that can be integrated into existing electroplating systems through simple sparging or aeration mechanisms. The oxygen-delivery apparatus leverages natural dissolution processes and existing system components, avoiding the need for complex specialized equipment while maintaining dissolved oxygen levels above 10 ppm
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Significantly reduces hillock formation on semiconductor substrates by at least an order of magnitude, providing an economical and effective solution to copper (I) ion reduction without altering standard operating conditions.
Implementation Method 1
maintain a dissolved oxygen concentration above 10 ppm
Implementation Method 2
electrochemical deposition
Implementation Method 3
electroplating operations
Data Source
AI summary
Electroplating systems according to the present technology may include a two-bath electroplating chamber including a separator configured to provide fluid separation between a first bath configured to maintain a catholyte during operation and a second bath configured to maintain an anolyte during operation. The electroplating systems may include a catholyte tank and an anolyte tank fluidly coupled with the two baths of the two-bath electroplating chamber. The electroplating systems may include a first pump configured to provide catholyte from the catholyte tank to the first bath. The electroplating systems may include a second pump configured to provide anolyte from the anolyte tank to the second bath. The electroplating systems may also include an oxygen-delivery apparatus configured to provide an oxygen-containing fluid within the electroplating system.