Oxygen Diffusion Prevention Layer for Nonvolatile Memory Contact Plugs
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Solution Overview
Problem
Existing nonvolatile memory devices face challenges in further miniaturization due to oxidation issues with contact plugs, leading to potential short-circuits and variations in resistance values, which hinder the increase in storage capacity and density of resistance-variable elements.
Innovation Solution
Incorporating an oxygen diffusion prevention layer between the insulating layer and resistance-variable elements, with contact plugs penetrating through this layer, to prevent oxygen diffusion and oxidation, allowing for independent material selection and oxidation of the resistance-variable layer after electrode etching, thus maintaining the integrity of the contact plugs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If contact plugs are used in nonvolatile memory devices, then electrical connection is achieved, but oxidation of contact plugs occurs leading to short-circuits and resistance variations
Solution Approach 1:
An oxygen diffusion prevention layer is introduced as an intermediary between the contact plug and the oxidation environment. This layer acts as a barrier that prevents oxygen from reaching and oxidizing the contact plug, thereby maintaining its electrical integrity while allowing the contact plug to fulfill its electrical connection function
2Reliability
If oxidation prevention measures are implemented, then contact plug integrity is maintained, but device miniaturization is hindered
Solution Approach 1:
The oxygen diffusion prevention layer is implemented as a thin film structure that provides effective oxidation protection while occupying minimal space. This thin film approach allows the protection function to be achieved without significantly increasing the overall device dimensions, thus enabling continued miniaturization
3Reliability
If continuous oxygen diffusion prevention layer is used, then oxidation is suppressed, but manufacturing complexity increases
Solution Approach 1:
The oxygen diffusion prevention layer is segmented into discrete portions rather than forming a continuous layer. Each portion is positioned to cover specific contact plugs, which reduces the overall complexity of the layer structure while maintaining effective oxidation suppression at each contact plug location
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables further miniaturization of nonvolatile memory elements while suppressing oxidation of contact plugs, reducing the risk of short-circuits and maintaining stable resistance values, thereby enhancing the storage capacity and reliability of the memory devices.
Implementation Method 1
Each of the plurality of oxygen diffusion prevention layers is divided only between the insulating layer and the each of the plurality of resistance-variable elements to correspond to each of the plurality of contact plugs arranged for each of the plurality of resistance-variable elements
Data Source
AI summary
A nonvolatile memory device includes an insulating layer, oxygen diffusion prevention layers disposed on the insulating layer, a plurality of contact plugs, each of the plurality of the contact plugs penetrating through each of the plurality of the oxygen diffusion prevention layers and at least a part of the insulating layer, and a plurality of resistance-variable elements, each of the plurality of the resistance-variable elements covering each of the plurality of the contact plugs exposed on surfaces of the oxygen diffusion prevention layers and being electrically connected to each of the plurality of the contact plugs Each of the oxygen diffusion prevention layers is provided only between the insulating layer and each of the plurality of the resistance-variable elements to correspond to each of the plurality of the contact plugs arranged for each of the plurality of the resistance-variable elements.