Oxygen-Doped AlN Intermediate Layer for Semiconductor Crystal Quality
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Solution Overview
Problem
The high cost of sapphire or silicon carbide substrates and the reduction in crystal quality due to lattice parameter mismatches when growing nitridic compound semiconductor materials on silicon substrates pose challenges for producing high-quality semiconductor components like LEDs.
Innovation Solution
A semiconductor component with a nitridic compound semiconductor layer sequence grown on a silicon substrate using an oxygen-doped AlN intermediate layer, which improves crystal quality and homogeneity by adjusting the lattice constant and reducing strain, allowing for thicker, high-quality active regions to be achieved.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If sapphire or silicon carbide substrates are used for growing nitridic compound semiconductor materials, then crystal quality is maintained, but production cost increases significantly
Solution Approach 1:
An AlN intermediate layer is introduced between the silicon substrate and the nitridic compound semiconductor material. This intermediate layer acts as a mediator that bridges the lattice mismatch between silicon and the nitridic compound semiconductor, enabling high-quality crystal growth on cost-effective silicon substrates without directly contacting the expensive sapphire or silicon carbide substrates.
Solution Approach 2:
The lattice constant of the AlN intermediate layer is adjusted by doping with oxygen, which modifies the physical parameters of the intermediate layer to better match the silicon substrate. This parameter change enables improved lattice matching and reduces strain, allowing high-quality crystal growth on silicon substrates.
2Ease of manufacture
If silicon substrates are used for growing nitridic compound semiconductor materials, then production cost decreases, but crystal quality deteriorates due to lattice parameter mismatches
Solution Approach 1:
The AlN intermediate layer serves as a mediator between the silicon substrate and the nitridic compound semiconductor material, buffering the lattice mismatch and enabling high-quality crystal growth on inexpensive silicon substrates.
Solution Approach 2:
Oxygen doping of the AlN intermediate layer modifies its lattice constant and other physical parameters to optimize the lattice matching with silicon substrates, thereby improving crystal quality while maintaining cost advantages.
3Reliability
If traditional AlN nucleation layers are used on silicon substrates, then some strain compensation is achieved, but crystal homogeneity remains insufficient for thick active regions
Solution Approach 1:
Oxygen doping of the AlN intermediate layer optimizes its physical and chemical parameters, including lattice constant, to achieve both strain compensation and improved crystal homogeneity. This enables the growth of thick active regions with high crystal quality throughout the entire layer thickness.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of an oxygen-doped AlN intermediate layer enhances the crystalline quality and homogeneity of the active region layers, as evidenced by reduced crystallographic X-ray reflection half-widths, overcoming the limitations of traditional silicon-based semiconductor components.
Implementation Method 1
strains occur due to different lattice parameters of the materials involved
Implementation Method 2
suitable layer sequences, for example made from GaN-containing compound semiconductor materials, are grown on a substrate
Data Source
Figure 1~2
Figure 3~4A
Figure 4B~4C
AI summary
The invention relates to a semiconductor component having a semiconductor layer sequence (2) made of a nitridic composite semiconductor material on a substrate, wherein the substrate (1) comprises a silicon surface facing the semiconductor layer sequence (2), and the semiconductor layer sequence (2) comprises an active region (21) and at least one intermediate layer (3) made of an oxygen-doped AlN composite semiconductor material between the substrate (1) and the active region (21). The invention further relates to a method for producing a semiconductor component.