Semiconductor Devices TRIZ Cases

A stacked high barrier III-V diode uses a metamorphic buffer layer sequence to reduce series resistance.

A nanostructure semiconductor light-emitting device uses a filling layer to expose portions of the nanocore for enhanced emission.

A semiconductor light-emitting element uses a base layer with stress-strained segments in a random net shape to broaden the emission spectrum.

Segmenting the p-type region into a thin base and deep floating layer suppresses ON-voltage rise while increasing withstand voltage in trench IGBTs.

An oxygen-doped AlN intermediate layer enhances crystalline quality in nitridic compound semiconductor components grown on silicon substrates.

A GaN HEMT structure uses openings in the doped compound semiconductor layer to reduce exposed surface area and improve gate controllability.

Oxide spacers isolate the N-I junction from nitride layers, blocking electron flow through amorphous silicon to reduce current leakage.

An insulating reflective layer with an inclined lateral surface redirects light from a semiconductor structure to improve extraction efficiency.

A silicon carbide MOSFET structure modifies the base region geometry to suppress parasitic transistor operation.

A silicon carbide semiconductor device uses a specific trench structure to reduce source electrode resistance.

Vertical 3D GaN MISFETs eliminate surface trap induced current slump by transitioning from lateral to vertical current flow, reducing device size.

Multi-region field plate structure reduces dynamic Rdson and improves breakdown voltage by controlling peak electric field intensity.

A low hydrogen content film reduces oxygen and hydrogen levels in a p-type group III nitride semiconductor region to enable effective dopant activation.

Epitaxial growth of a low-dislocation buffer layer reduces defects caused by lattice mismatch, enhancing light-emitting efficiency.

A high-voltage semiconductor device uses a U-shaped second dielectric layer to expose the first layer for gate extension.

A tri-layered gate-control stack uses a mid-gap metal layer to homogenize electric fields across ferroelectric and anti-ferroelectric layers.

A segmented salicide block covers only the overlapping region corners to prevent parasitic leakage paths at the gate interface.

A laminate sub-mount with a metal core conducts heat away from an LED die, resolving insufficient thermal dissipation in high-output surface mount packages.

Epitaxial growth forms raised source and drain regions on a shared fin, enabling distinct threshold voltages for integrated LDMOS and FinFET devices.

Applying tensile strain to the first semiconductor layer lowers lattice mismatch with the quantum well, suppressing defects and boosting luminous efficiency.

A semiconductor device uses a two-part dummy active trench gate structure to increase the Cgc/Cge ratio.

A lateral power transistor uses floating semiconductor regions and a floating electrode to control charge carrier concentration in the drift layer.

High-concentration n-type conductive layer regions reduce junction resistance at the heterojunction interface, lowering access and on resistance in GaN devices.

A light emitting diode structure uses epitaxial lift-off to separate from its growth substrate.

Segmented doping in a nitride compound semiconductor MOSFET enables normally-off switching while maintaining high electron mobility and breakdown voltage.

A GaN cap layer creates a quantum well that blocks electron injection into the SiN passivation film, preventing current collapse under high drain voltage.

Vertical contact extension into recessed gate voids reduces parasitic capacitance and electrical resistance.

Oxidation-resistant metal film protects doped polysilicon gate electrodes in trench structures.

A semiconductor device uses a deep first well region to extract charge carriers from the drift region.

Segmented trench termination cells reduce electric field intensity near isolation structures, preventing oxide punch-through and extending device lifespan.

Widening end trenches in gallium oxide Schottky diodes increases bottom curvature radius to mitigate electric field concentration.

A semiconductor shield gate structure uses segmented insulation films to set precise thicknesses and simplify electrode connections.

Expanded quantum wells in axial nanowires increase emission surface area while passivation reduces non-radiative recombinations for higher optical efficiency.

A semiconductor light emitting device integrates a red light emitting layer with blue diodes and YAG phosphors to produce white illumination.

A high-electron-mobility transistor places its gate electrode beneath the channel to lower access resistance and parasitic capacitance.

A semiconductor layer sequence with insulating trenches and a mirror layer reflects radiation to boost light output.

Source metal layer openings above the gate field plate reduce gate-to-drain capacitance and switching losses while balancing breakdown voltage.

A bank layer defines emission areas with identical minor axes but different major axes across sub-pixels to support uniform solution deposition.

Multiple ohmic contact points disperse current in an LED grain structure, reducing shading area and improving light distribution uniformity.

A tapered drain electrode penetrates semiconductor layers to reduce on-resistance while maintaining breakdown voltage in high electron mobility transistors.

A dummy gate protects isolation edges during etching, enabling uniform epi cavity filling and reliable contact formation.

Segmented dummy gates block leakage currents while an analytical W/L model enables rapid electrical characteristic calculations for diverse channel geometries.

A mirrored side surface reflects radiation back into the semiconductor body to increase radiant power coupling.

A segmented UV LED substrate uses protrusion parts to block lattice defects during epitaxial growth.

Shallow trench isolation and buried RESURF structures in a lateral high voltage transistor prevent breakdown voltage degradation during dense integration.

Sacrificial thin film enables laser lift-off transfer of micro LED arrays, reducing mass-transfer steps and improving yield.

A trench IGBT uses segmented emitter regions to minimize gate-substrate overlap area and reduce electrode capacitance.

Screen printing template deposits phosphor gel onto LED chips, preventing uneven coating and material waste.

A wraparound gate contact lowers parasitic resistance in AlGaN/GaN transistors, enabling terahertz operation without sacrificing power delivery.

Segmenting the gate with a separation space lowers impact ionization at isolation corners, maintaining low on-resistance while improving breakdown voltage.