Oxygen Removal in Semiconductor Processing Chamber
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Solution Overview
Problem
Oxygen present during semiconductor device processing can degrade dielectric layers in non-volatile memory devices, leading to poorer performance and slower memory erase speeds.
Innovation Solution
Removing oxygen from the processing chamber by evacuation or displacement with another gas, such as nitrogen, to prevent reactions with device components and maintain the integrity of high dielectric constant layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If device processing is performed in the presence of oxygen, then standard processing conditions are maintained, but dielectric layers degrade and device performance worsens
Solution Approach 1:
The patent removes oxygen from the processing chamber by evacuation or displacement with inert gas, extracting the harmful element from the processing environment to prevent degradation of dielectric layers and improve device performance
Solution Approach 2:
The patent creates an inert processing atmosphere by either evacuating the chamber to vacuum or displacing oxygen with inert gases such as nitrogen or argon, thereby preventing oxidative reactions with dielectric layers during subsequent processing steps
2Manufacturing precision
If oxygen is removed from the processing chamber, then dielectric layer integrity is maintained, but processing complexity increases
Solution Approach 1:
The patent performs oxygen removal as a preliminary step before dielectric layer formation or subsequent processing steps, ensuring the processing chamber is prepared in advance with the appropriate atmosphere to prevent degradation during critical manufacturing operations
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Prevents degradation of dielectric layers, ensuring faster memory erase speeds and improved device performance by maintaining the dielectric constant of high K materials.
Implementation Method 1
the processing chamber may be evacuated to remove the oxygen
Implementation Method 2
the oxygen may be displaced with another gas, such as, for example, nitrogen (N2)
Data Source
AI summary
A method includes forming at least a portion of a semiconductor device in a processing chamber containing oxygen and removing substantially all of the oxygen from the processing chamber. The method further includes forming remaining portions of the semiconductor device in the processing chamber without the presence of oxygen.