Non-volatile Memory Element with Oxygen-Supplying Layer
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Solution Overview
Problem
Current non-volatile memory devices face challenges in achieving reliable and reproducible resistance change characteristics due to the reactivity of electrodes with oxygen ions and vacancies, leading to instability and high manufacturing costs, especially when using non-precious metals.
Innovation Solution
Incorporating an oxygen-supplying layer and an oxide layer with multi-trap levels, where the oxygen concentration is gradually or regionally varied in the thickness direction, and a reaction-inhibiting layer to control ionic species movement, allowing for stable resistance change without the need for precious metal electrodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If non-precious metal electrodes are used to reduce manufacturing costs, then device cost is reduced, but electrode reactivity with oxygen ions and vacancies causes instability and poor reliability
Solution Approach 1:
An oxygen supply layer is introduced as an intermediary component between the non-precious metal electrode and the oxide layer. This layer prevents direct reaction between the electrode and oxygen ions/vacancies, thereby stabilizing the electrode while maintaining cost benefits. The oxygen supply layer acts as a buffer that controls oxygen ion migration and protects the electrode from degradation.
Solution Approach 2:
The memory element employs a composite structure combining non-precious metal electrode, oxygen supply layer, and oxide layer with multi-trap levels. This composite approach integrates materials with complementary properties: the non-precious metal provides cost effectiveness, the oxygen supply layer provides stability, and the multi-trap oxide layer provides memory functionality. The synergistic combination resolves the contradiction between cost and reliability.
2Device complexity
If a simple single-layer oxide structure is used, then device complexity is reduced, but resistance change characteristics are unreliable and reproduction is difficult
Solution Approach 1:
The oxide layer is designed with spatially varying properties through multiple trap levels at different depths. Each trap level is positioned at specific locations within the oxide layer to capture and hold oxygen ions or vacancies at different energy states. This local differentiation of trap levels enables reliable and reproducible resistance change characteristics while maintaining a relatively simple overall layer structure.
Solution Approach 2:
The invention utilizes changes in oxygen concentration and trap level distribution as key parameters to achieve reliable resistance switching. By controlling the depth, concentration, and energy levels of traps within the oxide layer, the memory element achieves stable set and reset characteristics. The parameter optimization of trap levels enables dependable memory operation without requiring complex multi-layer structures.
3Manufacturing precision
If oxygen concentration is uniformly distributed in the oxide layer, then manufacturing precision is simplified, but resistance change characteristics and memory performance are poor
Solution Approach 1:
The oxide layer exhibits non-uniform oxygen concentration distribution with specific regions having different oxygen levels. This local variation creates distinct zones with different electrical properties, enabling effective resistance switching and memory functionality. The gradient or regionally varied oxygen concentration enhances memory performance while remaining compatible with standard manufacturing processes through controlled deposition conditions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the ON/OFF resistance ratio, stability, reproducibility, and reliability of the memory element, enabling high-speed operation and reducing manufacturing costs by using non-precious metal electrodes while maintaining memory device performance.
Implementation Method 1
the oxide layer may have a multi-trap level (a plurality of trap levels)
Implementation Method 2
The resistance change characteristic of the memory layer may result from the movement of ionic species between the oxygen-supplying layer and the oxide layer. The ionic species may be oxygen ions.
Implementation Method 3
The non-volatile memory element may further include a reaction-inhibiting layer disposed between the first electrode and the memory layer
Data Source
AI summary
Example embodiments, relate to a non-volatile memory element and a memory device including the same. The non-volatile memory element may include a memory layer having a multi-layered structure between two electrodes. The memory layer may include first and second material layers and may show a resistance change characteristic due to movement of ionic species therebetween. The first material layer may be an oxygen-supplying layer. The second material layer may be an oxide layer having a multi-trap level.