Ozone Treatment for Semiconductor Channel Layer Surface Quality
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Solution Overview
Problem
The integration density and operational reliability of two-dimensional non-volatile memory devices are limited, prompting the development of three-dimensional memory devices with stacked memory cells, but these face challenges in manufacturing processes that result in defective surfaces and reduced carrier mobility.
Innovation Solution
A method of manufacturing semiconductor devices involves forming a stacked structure, etching a channel layer, and performing ozone (O3) treatment on the etched surface to cure defects, reduce dangling bonds, and improve surface roughness, thereby enhancing the channel layer's characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional manufacturing processes are used for three-dimensional memory devices, then the device structure can be formed, but the etched surface of the channel layer contains defects and dangling bonds that reduce carrier mobility
Solution Approach 1:
The patent applies ozone (O3) treatment to the etched surface of the channel layer. Ozone is a strong oxidant that effectively removes defects and dangling bonds from the silicon surface through oxidation reactions, thereby improving surface quality and carrier mobility without requiring additional high-temperature processing steps
2Productivity
If the channel layer thickness is reduced to improve integration density, then more memory cells can be stacked, but the etched surface quality deteriorates with increased defects
Solution Approach 1:
By applying ozone treatment after etching, the patent can process thinner channel layers with maintained surface quality. The strong oxidation capability of ozone effectively cleans defects even on thin layers, enabling higher integration density without sacrificing surface quality or carrier mobility
3Manufacturing precision
If high-temperature heat treatment is applied to improve surface quality, then defects can be reduced, but the manufacturing process complexity and time increase
Solution Approach 1:
The patent replaces conventional high-temperature heat treatment with ozone treatment, which achieves equivalent or superior surface quality improvement at lower temperatures. This reduces process complexity and time while maintaining effective defect removal and dangling bond elimination
Solution Approach 2:
The patent substitutes thermal processing (heat treatment) with chemical processing (ozone treatment). This replacement eliminates the need for high-temperature equipment and complex thermal management, simplifying the manufacturing process while achieving the same surface quality improvement
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The O3 treatment effectively reduces defects and improves carrier mobility and swing characteristics of transistors, leading to a more reliable and stable semiconductor device with improved integration density.
Implementation Method 1
performing ozone (O3) treatment on an etched inner surface of the channel layer
Implementation Method 2
forming a polysilicon layer by performing heat treatment on the amorphous silicon layer
Data Source
AI summary
A method of manufacturing a semiconductor device includes forming a stacked structure, forming an opening in the stacked structure, forming a preliminary channel layer in the opening, forming a channel layer by performing heat treatment on the preliminary channel layer, etching an inner surface of the channel layer, and performing ozone (O3) treatment on an etched inner surface of the channel layer.