Ozone-Enhanced CMP Removal of Polymer Layers
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Solution Overview
Problem
The slow removal rate of polymer layers during chemical mechanical polishing (CMP) process limits the planarization of semiconductor substrates, hindering the quality and performance of semiconductor devices due to step-height differences on the surface.
Innovation Solution
Exposing the polymer layer to ozone gas, combined with a heated deionized water boundary layer, significantly increases the CMP removal rate by diffusing ozone into the polymer layer, enhancing its susceptibility to CMP processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional CMP process is used on polymer layers, then the polymer layer can be planarized, but the removal rate is extremely slow (taking an hour or more)
Solution Approach 1:
The patent applies parameter changes by exposing the polymer layer to ozone gas, which chemically modifies the polymer surface properties. This treatment changes the chemical composition and surface energy of the polymer, making it more susceptible to CMP removal. The ozone exposure time, concentration, and temperature are controlled parameters that optimize the removal rate enhancement while maintaining planarization quality.
Solution Approach 2:
The patent utilizes ozone, a strong oxidant, to treat the polymer layer before CMP. The ozone oxidation creates surface modifications that dramatically increase the CMP removal rate. The oxidized polymer surface has altered chemical properties that facilitate faster mechanical removal during CMP, transforming the originally slow CMP process into a high-speed planarization process.
2Manufacturing precision
If polymer layers are not planarized, then manufacturing time is reduced, but step-height differences degrade device quality and performance
Solution Approach 1:
The patent applies preliminary action by treating the polymer layer with ozone gas before the CMP process. This pre-treatment modifies the polymer surface chemistry in advance, preparing it for rapid removal during CMP. The ozone exposure creates surface conditions that enable the subsequent CMP step to achieve both high removal rates and excellent planarity, thus resolving the contradiction between precision and productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves a removal rate up to 600% higher than untreated polymer layers, facilitating faster planarization and improving semiconductor manufacturing throughput.
Implementation Method 1
diffusing a gas into at least a portion of a thickness of the polymer layer such that a removal rate by a chemical mechanical polishing (CMP) process is at least approximately 150% of a removal rate of an untreated polymer layer
Implementation Method 2
exposing the at least a portion of the polymer layer to an ozone gas
Implementation Method 3
heating the deionized water to a temperature of approximately 25 degrees Celsius to approximately 100 degrees Celsius
Implementation Method 4
flowing deionized water on the at least a portion of the polymer layer while exposing the at least a portion of the polymer layer to the ozone gas
Data Source
AI summary
A polymer layer on a substrate may be treated with ozone gas or with deionized water and ozone gas to increase a removal rate of the polymer layer in a chemical mechanical polishing (CMP) process. The ozone gas may be diffused directly into the polymer layer or through a thin layer of deionized water on the surface of the polymer layer and into the polymer layer. The deionized water may also be heated during the process to further enhance the diffusion of the ozone gas into the polymer layer.