Lapping Machines TRIZ Cases

A polishing measurement device scans wafer shape to compute thickness profiles and delta correction values for precise end point timing.

A unitary platen housing integrates an end point detector within recesses, eliminating fluid leakage between separate platens that damages components.

A polishing apparatus calculates an F/T value from motor load current and pad surface temperature to dynamically adjust rotation speed and pressure.

Ozone diffusion through heated water enhances polymer layer susceptibility, resolving slow planarization bottlenecks in semiconductor manufacturing.

A wafer grinding apparatus determines processing states using a grindstone with a 5 to 200 percent wear rate and motor load current analysis.

A cleaning assembly uses a substrate-mounted member to mechanically clean the suction surface of a conveying unit.

Local pressure nodules in a CMP head compensate for thickness asymmetry and uneven topography, enhancing planarization uniformity without increasing cycle time.

Radial grooves connect to distributed through-holes, ensuring adequate polishing liquid supply to small-diameter wafers and preventing defective processing.

A polishing pad light-transmitting region uses a soft layer under the surface to minimize wafer scratches during chemical mechanical planarization.

An AC signal generator produces reference signals to stabilize eddy-current sensor output for semiconductor wafer polishing.

A polishing head uses a rotation transmitting plate to drive a carrier while a gimbal mechanism allows tilting.

An encoder wheel measures polishing article advancement length to determine supply roll tensioning torque for web-based chemical mechanical planarization systems.

A rotatable base member adjusts clamp roller positions to maintain equal holding pressures on the substrate periphery.

Segmented polishing units rotate and revolve to contact the substrate surface, eliminating the need for a heavy upper plate that limits support capability.

A detachable shielding pad on the operation arm intercepts slurry contaminants before they reach the grinding surface.

A replacing tool with a hinge mechanism engages sponge brush hooks to prevent contamination during CMP wafer cleaning.

Optical sensors monitor pad wear to adjust process parameters and prevent failure.

An acoustic sensor captures substrate polishing sounds to monitor progress through spectral analysis.

Grinding a wafer reverse side at 45 to 75 degrees prevents edge chipping while maintaining device formation area.

A dynamic control system adjusts polishing parameters to maintain semiconductor wafer flatness during double-sided processing.

A flexible annular polishing pad conforms to wafer notches, preventing chipping and reducing waste.

Acute angled grooves in locating rings extend service life by reducing wear and maintaining fluid flow efficiency.

A polishing apparatus regulates surface temperature via a heat exchanger to maintain a target polishing rate.

An annular modified layer restrains edge chipping during grinding, reducing swarf generation and protecting devices.

A polishing apparatus integrates a surface-property measuring device on a movable support arm to measure pad conditions.

A polishing apparatus monitors torque current alongside optical film thickness signals to determine the precise endpoint.

A chemical-mechanical polishing composition uses a charged polymer to encapsulate abrasive particles and prevent aggregation during glass substrate processing.

Platen-mounted acoustic sensors capture friction emissions from CMP interfaces, enabling controllers to adjust polishing pressure and prevent substrate damage.

A light-transmitting polishing pad enables photochemical activation of slurry particles to adjust the chemical mechanical polishing rate.

An acrylic plate polishing head supplies water to remove material from workpieces, eliminating costly slurry waste and complex reproduction processes.

PID algorithms regulate steam pressure and temperature on the polishing pad, reducing wafer-to-wafer non-uniformity caused by heat sink effects.

A polishing apparatus measures torque waveforms to detect roller malfunctions through Fourier-transform frequency analysis.

A guide vane channels deionized water and slurry to the pad exterior, preventing slurry dilution while maintaining temperature control.

Adjacent polishing modules with different pad sizes handle varying substrate conditions, reducing facility footprint while maintaining high throughput.

An elastic holder compensates for stroke errors in a polishing head, enabling precise film thickness control across semiconductor wafers.

An asymmetric cleaning element with a raised central portion cleans the entire pen sponge surface while gravity drains particles away, preventing reattachment.

Incorporating aromatic compounds into the polyurethane resin reduces dressing time and prevents semiconductor wafer scratches.

A pressure calibration jig connects multiple airbags to a sensor through flow control valves.

Polishing apparatus measures uppermost film thickness to determine processing time, preventing dishing and erosion defects.

Automated fuzzy logic control aligns hydrostatic pads based on warp data, resolving the trade-off between manufacturing precision and production throughput.

A neutral pH buffer solution containing Ga ions enables selective oxide removal during substrate polishing.

Adjusting eddy current signal gain compensates for environmental drift during semiconductor polishing.

Selective diamond-like carbon coating on a wafer carrier prevents edge damage during polishing by avoiding contact with the hard layer.

Composite polyurethane pads absorb cyclic deformation energy via damping, reducing dishing and improving within-wafer uniformity.

A plenum with varied openings delivers heated or cooled fluid onto a polishing pad to manage temperature non-uniformity across the wafer.

A polishing pad thickness gauge measures wear to adjust polishing time via feedforward control, bypassing costly closed-loop systems that reduce throughput.

Vertically arranged cleaning units enable parallel wafer processing, resolving throughput congestion and contamination risks in substrate handling.