Package Substrate Self-Aligned Patterning for Continuous Bonded Edges
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Solution Overview
Problem
Conventional semiconductor packaging processes result in discontinuous and uneven edge surfaces due to alignment issues and the need for precise stacking and etching of semiconductor structures, leading to inefficiencies and potential structural discontinuities.
Innovation Solution
A self-aligned patterning method where semiconductor structures are bonded and stacked first, then etched together using one structure as a mask, eliminating the need for precise alignment and separate photomasks, resulting in a continuous and smooth edge surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional packaging processes are used with separate alignment and etching steps, then manufacturing precision can be maintained, but device complexity and process time increase significantly
Solution Approach 1:
The patent combines the alignment and etching steps into a single self-aligned process. The first semiconductor structure serves as its own alignment reference and etch mask, eliminating the need for separate photomask alignment steps. This merging of functions directly reduces process complexity and improves productivity by reducing the number of discrete manufacturing steps.
Solution Approach 2:
The first semiconductor structure performs multiple functions: it serves as the reference structure for alignment, as the etch mask defining the pattern, and as the structural element to be retained. This self-service approach where the structure itself provides the alignment and patterning functions eliminates the need for external photomasks and complex alignment equipment, thereby reducing device complexity.
2Manufacturing precision
If precise stacking and separate photomask alignment are performed, then manufacturing precision is maintained, but loss of time increases due to multiple process steps
Solution Approach 1:
The patent performs the alignment action preliminarily by designing the first semiconductor structure with features that inherently serve as alignment references. The structure is configured beforehand to self-align with the second structure during stacking, eliminating the need for time-consuming post-stack alignment procedures and separate photomask alignment steps during etching.
Solution Approach 2:
The patent merges the alignment reference function and etch mask function into the first semiconductor structure itself. This consolidation allows a single etching process to simultaneously achieve both precise alignment and pattern definition, thereby maintaining manufacturing precision while significantly reducing the total process time compared to separate alignment and etching steps.
3Manufacturing precision
If multiple separate processes are used for alignment and etching, then manufacturing precision can be achieved, but ease of manufacture decreases
Solution Approach 1:
The first semiconductor structure is designed to be self-sufficient, serving as its own alignment reference and etch mask. This self-service capability eliminates the need for external photomasks and complex alignment procedures, making the manufacturing process simpler and easier to execute while maintaining high pattern accuracy through the inherent geometric relationships of the structure.
Solution Approach 2:
The first semiconductor structure performs multiple functions simultaneously: it provides structural support, serves as an alignment reference, and acts as an etch mask. This multi-functionality consolidates what would traditionally require multiple separate processes into a single integrated operation, thereby improving ease of manufacture while maintaining manufacturing precision.
Data Source
AI summary
Systems, devices, and methods for self-aligned patterning for bonding semiconductor structures are provided herein. A semiconductor device assembly can include a first semiconductor structure and a second semiconductor structure bonded to the first semiconductor structure. The first semiconductor structure can have a first dimension and the second semiconductor structure can have a second dimension greater than the first dimension such that a probing pad of the second semiconductor structure, a side edge of a first dielectric layer of the first semiconductor structure, and a side edge of a second dielectric layer of the second semiconductor structure are exposed. The exposed side edge of the first dielectric layer and the exposed side edge of the second dielectric layer can form a continuous surface. In some embodiments, the continuous surface comprises an artifact of a fabrication method of the present technology.