Semiconductor Package TIM Structure for Reliable Die-to-Lid Heat Transfer

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Solution Overview

Problem

The semiconductor integrated circuit (IC) industry faces challenges in managing the increased complexity of processing and manufacturing as device feature sizes shrink, necessitating advancements in IC fabrication to maintain efficiency and performance.

Innovation Solution

A manufacturing process for semiconductor devices involving the formation of interconnection structures with conductive layers and dielectric layers, followed by the integration of semiconductor dies and interposers to create package structures, utilizing conductive vias and redistribution layers for electrical connections, and incorporating testing structures for verification.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If device feature size is scaled down to increase functional density, then production efficiency and performance are improved, but processing and manufacturing complexity increases

Engineering Contradiction:
Improveproduction efficiencyVSAvoidprocessing complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The manufacturing process is divided into distinct modules: forming conductive layers in dielectric layers, creating through-dielectric vias, integrating semiconductor dies with interposers, and performing testing. This segmentation allows each module to be optimized independently, managing the complexity introduced by scaling while maintaining high functional density.

Inventive Principle:
Principle #1Segmentation

2Reliability

If device feature size is scaled down to increase functional density, then performance is improved, but processing and manufacturing complexity increases

Engineering Contradiction:
Improvedevice performanceVSAvoidmanufacturing complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

Testing structures are formed in the dielectric layer before semiconductor dies are integrated onto the interposer. This preliminary action allows potential manufacturing defects to be detected early in the process, ensuring device performance reliability while managing manufacturing complexity through proactive quality control.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent incorporates testing structures that provide feedback on the quality of conductive layers and electrical connections before final device assembly. This feedback mechanism enables real-time process control and adjustment, maintaining high performance standards despite the increased manufacturing complexity from scaling.

Inventive Principle:
Principle #23Feedback

3Reliability

If advanced packaging techniques are used to improve electrical connections, then reliability is enhanced, but device complexity increases

Engineering Contradiction:
Improveelectrical connection reliabilityVSAvoidpackage structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

An interposer is introduced as an intermediary substrate between semiconductor dies and the final package structure. The interposer provides a standardized platform for integrating multiple dies with controlled electrical connections through conductive vias and redistribution layers, enhancing connection reliability while managing the overall package complexity.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent transitions from planar interconnection to three-dimensional vertical stacking by forming through-dielectric vias and stacking semiconductor dies on the interposer. This dimensional change enables higher functional density and improved electrical connections while distributing the complexity across multiple layers rather than a single plane.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS20250364355A1Semiconductor device and manufacturing method thereof
Publication Date: 2025.11.27 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20250364355A1 patent drawing
  • US20250364355A1 patent drawing
  • US20250364355A1 patent drawing

AI summary

A semiconductor device includes a substrate, a package structure, a thermal interface material (TIM) structure, and a lid structure. The package structure is disposed on the substrate. The TIM structure is disposed on the package structure. The TIM structure includes a metallic TIM layer and a non-metallic TIM layer in contact with the metallic TIM layer, and the non-metallic TIM layer surrounds the metallic TIM layer. The lid structure is disposed on the substrate and the TIM structure.