Page Buffer Circuit Bit Line Spacing for Coupling Interference

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Solution Overview

Problem

Conventional page buffer circuits in nonvolatile memory devices experience coupling interference due to the close proximity of bit lines, which affects data reading and storage efficiency.

Innovation Solution

The proposed page buffer circuit design includes bit lines arranged at different levels with varying spaces between them, utilizing selection transistors and sensing circuits to minimize coupling interference by controlling the spacing and level configuration of bit lines.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If bit lines are arranged at the same level to simplify manufacturing, then ease of manufacture is improved, but coupling interference between adjacent bit lines increases

Engineering Contradiction:
Improveease of manufactureVSAvoidcoupling interference
Core Design Contradiction:
Ease of manufactureVSObject-affected harmful factors

Solution Approach 1:

The patent applies dimensionality change by transitioning bit lines from a two-dimensional same-level arrangement to a three-dimensional multi-level structure. Bit lines are divided into first bit lines and second bit lines positioned at different vertical levels, with coupling interference reduction achieved through strategic spacing at each level. This spatial reconfiguration maintains manufacturing feasibility while effectively reducing capacitive coupling between adjacent bit lines.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Area of stationary object

If bit lines are placed closer together to increase density, then area utilization is improved, but coupling interference increases

Engineering Contradiction:
Improvearea utilizationVSAvoidcoupling interference
Core Design Contradiction:
Area of stationary objectVSObject-affected harmful factors

Solution Approach 1:

The invention utilizes vertical stacking to achieve three-dimensional bit line arrangement, allowing higher density without increasing lateral proximity. First and second bit lines are positioned at different levels, enabling compact area utilization while maintaining sufficient spacing between lines at each level to minimize coupling interference.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent implements local quality by applying different spacing strategies to bit lines at different levels. First bit lines and second bit lines have optimized spacing configurations tailored to their specific positions and coupling requirements, allowing dense overall arrangement while maintaining local spacing quality to reduce interference.

Inventive Principle:
Principle #3Local quality

3Object-affected harmful factors

If spacing between bit lines is increased to reduce coupling interference, then coupling interference is reduced, but area occupied by bit lines increases

Engineering Contradiction:
Improvecoupling interferenceVSAvoidarea occupied
Core Design Contradiction:
Object-affected harmful factorsVSArea of stationary object

Solution Approach 1:

The patent resolves the area-expansion problem by moving the spacing dimension vertically. Instead of increasing lateral spacing between all bit lines, the invention positions first and second bit lines at different levels, achieving coupling interference reduction through vertical separation while maintaining compact lateral footprint.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS9070421B2Page buffer circuit and nonvolatile memory device having the same
Publication Date: 2015.06.30 SK HYNIX INC
  • US9070421B2 patent drawing
  • US9070421B2 patent drawing
  • US9070421B2 patent drawing

AI summary

A page buffer circuit includes first and second bit lines coupled to a first sensing circuit and with a first space therebetween, and third and fourth bit lines coupled to a second sensing circuit and with the first space therebetween. The second bit line and the third bit line are adjacent to each other with a second space therebetween, and the second space is smaller than the first space.