Page Buffer Defect Detection via Leakage Current Sensing
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Solution Overview
Problem
Existing memory devices lack an effective method to detect defects in page buffers, which can lead to data integrity issues and reduced performance, especially in volatile memory devices where power interruptions are common.
Innovation Solution
A memory device with a page buffer connected to a memory cell through a bit line, equipped with a voltage generator to apply a test voltage to a sensing node and a test controller to detect defects based on leakage current values, improving the detection of page buffer defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a test voltage is applied to the sensing node to detect page buffer defects, then the reliability of defect detection is improved, but the device complexity increases due to additional voltage generator and test controller components
Solution Approach 1:
The voltage generator is configured to generate both operating voltages for normal page buffer operation and test voltages for defect detection. The test controller integrates both normal operation control and test mode control, allowing a single controller to handle multiple functions. This multi-functionality approach enables defect detection capability to be added without proportionally increasing overall device complexity.
2Measurement precision
If leakage current measurement is used to detect page buffer defects, then the measurement precision of defect detection is improved, but the difficulty of detecting and measuring increases due to the need for precise current measurement circuits
Solution Approach 1:
The patent introduces a test controller as an intermediary component that coordinates the application of test voltages and the measurement of leakage currents. This intermediary manages the complex measurement process by controlling the timing and conditions of measurements, making the precise current measurement more manageable and integrated into the overall system.
3Adaptability or versatility
If multiple switches are used to apply test voltage to different sensing nodes, then the adaptability of the test system is improved, but the device complexity increases due to additional switch components
Solution Approach 1:
Multiple switches are configured to enable the voltage generator to apply test voltages to different sensing nodes (first sensing node and second sensing node) associated with different page buffers. These switches allow a single voltage generator to serve multiple testing purposes, and the test controller integrates control of these switches with normal operation control, making the additional components more justifiable through their multi-functional role.
Data Source
AI summary
A memory device includes a page buffer, a voltage generator, and a test controller. The page buffer is connected to a memory cell through a bit line, and is configured to sense a threshold voltage of the memory cell through a potential of a sensing node electrically connected to the bit line. The voltage generator is configured to generate a test voltage to be applied to the sensing node. The test controller is configured to control the voltage generator to apply the test voltage to the sensing node, and detect a defect of the page buffer, based on a leakage current value of the sensing node.