Parallel Gate Wiring Layout to Prevent Drive Signal Oscillation
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Solution Overview
Problem
High-speed power semiconductor elements can cause unexpected oscillation of drive signals, leading to circuit malfunctions in semiconductor devices.
Innovation Solution
A semiconductor device design that includes multiple first and second semiconductor elements connected in parallel, with specific wiring and connecting members to stabilize drive signals, preventing oscillation by electrically connecting first and second electrodes of each element.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If high-speed switching is implemented in power semiconductor elements, then switching speed is improved, but drive signal oscillation occurs causing circuit malfunction
Solution Approach 1:
The gate control wiring is divided into multiple separate wiring sections (first wiring section, second wiring section, third wiring sections) rather than using a single continuous wire. Each wiring section is spaced apart from others, segmenting the gate drive signal path to reduce oscillation coupling between parallel-connected semiconductor elements while maintaining high-speed switching capability
Solution Approach 2:
The patent introduces spatial separation in the wiring layout by spacing apart multiple wiring sections at different positions. This dimensional arrangement in the physical space creates independent signal paths that prevent oscillation propagation, resolving the contradiction between fast switching and signal stability
Data Source
AI summary
A semiconductor device includes semiconductor elements. Each semiconductor element, including first, second and third electrodes, is controlled to turn on and off current flow between the first electrode and the second electrode by drive signals inputted to the third electrode. The first electrodes of the semiconductor elements are electrically connected mutually, and the second electrodes of the semiconductor elements are electrically connected mutually. The semiconductor device further includes a control terminal receiving the drive signals, a first wiring section connected to the control terminal, a second wiring section, and third wiring sections, and further a first connecting member electrically connecting the first and the second wiring sections, a second connecting member electrically connecting the second wiring section and each third wiring section, and third connecting members connecting the third wiring sections and the third electrodes of the semiconductor elements.