Parallel Group III Nitride Light-Emitting Unit for Fast Response
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor light-emitting devices with small light emitting areas exhibit insufficient light emission quantity and longer response times, limiting their responsiveness and efficiency in applications like optical communication.
Innovation Solution
A light-emitting unit with a substrate featuring multiple Group III nitride semiconductor light-emitting devices connected in parallel, each with a small light emission volume (1 μm3 to 14 μm3), utilizing an n-type and p-type layer structure, and a light-emitting layer with a well and barrier layer configuration to achieve shorter response times and higher light emission quantity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If the light emitting area is reduced to improve responsiveness, then the response time decreases, but the light emission quantity becomes insufficient
Solution Approach 1:
The patent divides a single large light-emitting device into multiple smaller light-emitting devices with small light emission volumes (1 μm³ to 14 μm³ each). These multiple devices are arranged in parallel on the substrate, allowing each device to maintain fast response characteristics while the collective array provides sufficient total light emission quantity.
2Illumination intensity
If multiple light-emitting devices are connected in parallel to increase light emission quantity, then the total light output increases, but the device complexity increases
Solution Approach 1:
Multiple light-emitting devices with small emission volumes are integrated onto a single substrate and connected in parallel through common n-type and p-type wiring electrodes. This merging approach achieves high total light emission quantity while maintaining a compact, unified device structure that avoids the complexity of multiple separate devices.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The parallel connection of multiple light-emitting devices with small emission volumes results in a shorter response time (3 nsec to 11 nsec) and increased light emission quantity, enhancing the unit's responsiveness and efficiency.
Implementation Method 1
a light-emitting layer (120) comprising Group III nitride semiconductor... The light-emitting layer comprises a well layer and a barrier layer
Data Source
AI summary
To provide a light-emitting unit having a semiconductor light-emitting device with a good responsiveness and a sufficient light emission quantity. The light-emitting unit comprises a plurality of semiconductor light-emitting devices, an n-wiring electrode and a p-wiring electrode respectively connecting the semiconductor light-emitting devices in parallel, an n-pad electrode connected to the n-wiring electrode, and a p-pad electrode connected to the p-wiring electrode. At least one of the Group III nitride semiconductor light-emitting devices has a light emission volume of 1 μm3 to 14 μm3.