Parallel Releasing Structures for Narrow Gap Etching
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The etching rate of narrow gaps in semiconductor devices is limited, leading to increased processing time and cost due to the restricted entry of etchants, which slows down the fabrication of semiconductor devices as feature sizes decrease.
Innovation Solution
The implementation of parallel releasing structures within the semiconductor substrate that abut the narrow gap, allowing simultaneous etching from multiple directions to remove the sacrificial material, thereby enhancing etching performance and reducing processing time.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If traditional single-direction etching is used for narrow gaps, then the etching process is simple to implement, but the etching rate is limited and processing time increases
Solution Approach 1:
The patent divides the narrow gap into multiple segments by introducing parallel releasing structures that create multiple etching pathways. The single narrow gap is segmented into multiple sub-gaps, allowing etchants to access the sacrificial material from multiple directions simultaneously, thereby increasing the overall etching rate without requiring complex processing equipment.
Solution Approach 2:
The patent transitions from single-direction (one-dimensional) etching to multi-directional (three-dimensional) etching by introducing parallel releasing structures. This dimensional change allows etchants to approach the sacrificial material from multiple angles, dramatically improving etching efficiency while maintaining process simplicity.
2Manufacturing precision
If feature sizes are reduced to improve device integration, then device density increases, but etching access becomes more restricted and processing time increases
Solution Approach 1:
By segmenting the narrow gap using parallel releasing structures, the patent enables etchants to access reduced-size features from multiple directions. This segmentation overcomes the access limitations imposed by smaller feature sizes, maintaining fast processing times even as device integration increases.
3Reliability
If narrow gap width is decreased to improve device performance, then device performance improves, but etchant entry is restricted and etching time increases
Solution Approach 1:
The patent uses parallel releasing structures to create multi-dimensional etching access to narrow gaps. This allows etchants to reach the sacrificial material in decreased-width gaps from multiple directions simultaneously, maintaining short etching durations even as gap width is reduced to improve device performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method significantly reduces the time required to remove sacrificial material from narrow gaps by enabling etchant access from multiple directions, improving etching efficiency and reducing the overall fabrication time and cost of semiconductor devices.
Implementation Method 1
Etching is a process by which material is removed from a semiconductor substrate to provide a topology that is used to form one or more layers on the semiconductor substrate.
Implementation Method 2
The etchant may comprise particles that react with an exposed surface of the semiconductor substrate.
Implementation Method 3
a dry etchant may comprise energized particles which collide with an exposed surface of a semiconductor substrate to dislodge atoms from the exposed surface
Data Source
AI summary
The present disclosure, in some embodiments, relates to a method of semiconductor processing. The method may be performed by etching a substrate to define a trench within the substrate. A sacrificial material is formed within the trench. The sacrificial material has an exposed upper surface. A plurality of discontinuous openings are formed to expose separate segments of a sidewall of the sacrificial material. The plurality of discontinuous openings are separated by non-zero distances along a length of the trench. An etching process is performed to simultaneously etch the exposed upper surface and the sidewall of the sacrificial material.