Partial Voltage Read for Faster Solid State Memory Access
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Solution Overview
Problem
Conventional solid state memory devices experience slow memory read times due to the need to wait for voltage to settle before reading, which can be optimized by performing partial voltage reads before the voltage reaches its steady state.
Innovation Solution
Implementing a system that performs partial voltage reads on memory cells before they reach their steady state voltage, using a comparison with a reference cell and error correction to quickly determine digital values, and if errors occur, initiating full voltage reads after settling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If full voltage reads are performed after voltage settles, then measurement precision is improved, but read time increases
Solution Approach 1:
The system performs a preliminary partial voltage read at an intermediate voltage level before the voltage fully settles. This preliminary action allows the system to obtain data quickly while using error correction codes to ensure accuracy, thereby reducing read time without sacrificing measurement precision.
Solution Approach 2:
The system changes the voltage parameter dynamically during the read operation. It reads at an intermediate voltage level (partial voltage read) and only transitions to the full settled voltage level if errors are detected, thus optimizing both speed and accuracy by adapting the voltage parameter to the specific read requirements.
2Loss of time
If partial voltage reads are performed before voltage settles, then read time is reduced, but measurement precision deteriorates
Solution Approach 1:
The system uses error correction codes to provide feedback about the accuracy of partial voltage reads. If errors are detected in the partial read, the system feeds back to perform a full voltage read, ensuring precision is maintained when needed while still benefiting from faster partial reads when successful.
Solution Approach 2:
The system applies partial action by reading at an intermediate voltage level that is not fully settled, accepting some imprecision but gaining significant speed improvement. The excessive action of error correction codes compensates for this partial imprecision, allowing the system to proceed quickly while maintaining overall reliability.
3Reliability
If error correction codes are applied to partial voltage reads, then reliability is improved, but device complexity increases
Solution Approach 1:
The error correction code mechanism serves multiple functions: it validates partial voltage reads, enables faster reading by allowing intermediate voltage reads, and provides a fallback mechanism for full voltage reads when errors occur. This multi-functionality justifies the added complexity by delivering reliability improvements across multiple operational scenarios.
Data Source
AI summary
A partial voltage level read is made on memory cells of a solid state memory device during a voltage settling time after the memory cells are charged (e.g., by a pulse from a charge pump). Digital values representing partial voltage levels are checked for errors (e.g., by an error correction code (ECC) engine). If the values can be corrected, then the values are released for host access. If the values cannot be corrected, then a full voltage read is performed on the memory cells after the voltage levels have substantially settled. Digital values corresponding to the full voltage reads can be released for host access. The use of partial voltage reads results in faster read of solid state memory devices.