Read-Only Memories TRIZ Cases
- Self-reference sense amplifier circuit for flash memory
A self-reference sense amplifier circuit stabilizes sensing operations using dummy memory cells as a voltage reference.
- Phase-Change Memory Saturation Pulse Drift Control
Applying a saturation pulse accelerates resistance drift to saturation, ensuring reliable read operations.
- PRAM Memory Interface Module for Multi-Protocol Signal Conversion
A unified interface module converts command and data signals from various memory types into PRAM-compatible formats.
- Flash Memory Sense Amplifier Synchronization
Extends verify operation duration to synchronize sense amplifier switching with memory partition states.
- 3D Semiconductor Memory Device With Nested Pass Gate
A semiconductor memory device uses a molded insulating structure with an overlapping first area and a sideways extending second area to house a pass gate.
- Semiconductor Storage Device Vertical Stacking Layout
Vertical stacking separates peripheral circuits from sense amplifiers, reducing connection resistance and overall area.
- Sense Amplifier Voltage Regulator with Current Injection
A voltage regulator uses a reference sense amplifier and current injector to maintain stable output levels during memory read operations.
- Partial Voltage Read for Faster Solid State Memory Access
A partial voltage read mechanism retrieves digital values from memory cells before steady state.
- Floating Source Line 2T SONOS Memory Cell Programming
Equipotential source lines minimize voltage across transistors to reduce bit line disturb and enhance data retention reliability.
- Virtual Ground Memory Programming via Variable Drain Biases
Variable drain biases applied to virtual ground memory groups widen retention windows and ease buried drain contact-induced operation.
- Semiconductor Memory Sense Amplifier Kick Timing Optimization
Resistor sections synchronize control signal kick timing with word line voltage to reduce RC delay and stabilization time in semiconductor memory devices.
- Memory Devices with Different Sized Blocks of Memory Cells
Multiple block sizes in a memory array reduce control-gate capacitance for faster programming while maintaining high storage capacity.
- Nonvolatile Logic Array with FRAM State Retention
Ferroelectric random access memory retains logic states without power, eliminating standby leakage current in portable devices.
- Queue Register Command Set Storage for Semiconductor Storage Devices
A queue register stores command sets in advance to enable high-speed internal operations.