Semiconductor Memory Sense Amplifier Kick Timing Optimization
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Solution Overview
Problem
Existing semiconductor memory devices face challenges in efficiently managing the voltage kick operation for word lines and control signals, leading to increased RC delay and stabilization time, which affects the speed of read operations.
Innovation Solution
The semiconductor memory device incorporates a configuration with row decoder modules and sense amplifier modules, where the control signal BLC is supplied through resistor sections to align the time variation of the kick amount with the word line voltage, optimizing the RC delay and stabilization time.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If the control signal BLC is supplied without resistor sections, then the circuit complexity is reduced, but the RC delay increases and stabilization time is extended
Solution Approach 1:
Resistor sections are introduced as intermediary elements between the control signal BLC supply lines and the bit lines. These resistor sections act as mediators that control the timing of voltage kick application, thereby reducing RC delay and stabilization time without significantly increasing overall circuit complexity.
Solution Approach 2:
The invention changes the electrical parameters of the control signal supply path by introducing resistor sections with specific resistance values. This parameter modification allows precise control over the timing characteristics of the voltage kick, optimizing the balance between circuit complexity and stabilization time.
2Device complexity
If the kick amount timing is not aligned between control signals and word lines, then the control circuit is simpler, but the read operation speed decreases
Solution Approach 1:
Resistor sections are used as intermediary elements that synchronize the timing of voltage kick application across different signal paths. By carefully selecting resistor values, the invention aligns the kick amount timing between control signals and word lines, improving read operation speed without requiring complex control circuitry.
Solution Approach 2:
The invention modifies the timing parameters of voltage kick application by introducing resistor sections with specific resistance values. This parameter adjustment ensures that the kick amount for control signals and word lines occurs at aligned times, thereby enhancing read operation speed while keeping the control circuit relatively simple.
3Speed
If resistor sections are added to align kick amount timing, then the read operation speed is improved, but the device complexity increases
Solution Approach 1:
The invention introduces resistor sections with specifically designed resistance values to align the timing of voltage kick application. This parameter-based approach improves read operation speed by ensuring synchronized kick timing, while the simplicity of the resistor implementation keeps the overall device complexity increase minimal.
Data Source
AI summary
According to one embodiment, a semiconductor memory device includes a first conductor extending in a first direction, bit lines, sense amplifiers, and a second conductor extending in the first direction. A plurality of first memory cells being connected to the first conductor. The bit lines respectively connected to the first memory cells. The first sense amplifiers are respectively connected to a plurality of first bit lines included in the bit lines, each of the first sense amplifiers including a first sense node, and a first transistor connected between the first sense node and a corresponding one of the first bit lines. The second conductor function as gate electrodes of the first transistors included in the first sense amplifiers.