PRAM Memory Interface Module for Multi-Protocol Signal Conversion

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Solution Overview

Problem

Conventional semiconductor memory devices lack improved operating speed and reliability, particularly in nonvolatile memory systems which are essential for modern electronic devices.

Innovation Solution

A semiconductor memory device system that includes a memory cell array with a unified interface module capable of converting command, address, and data signals from different types of memory devices (such as DRAM, SRAM, or flash) into signals suitable for Phase Change Random Access Memory (PRAM) cells, enabling seamless operation and integration of various memory types without the need for replacing controllers.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If nonvolatile memory (NAND flash) is used to replace volatile memory (DRAM/SRAM), then data retention reliability is improved, but operating speed deteriorates

Engineering Contradiction:
Improvedata retentionVSAvoidoperating speed
Core Design Contradiction:
ReliabilityVSSpeed

Solution Approach 1:

The patent merges the advantages of both volatile and nonvolatile memory types into a single PRAM device. PRAM combines the nonvolatile data retention capability of flash memory with the fast operating speed of volatile memory, eliminating the need to choose between reliability and speed. The unified memory array can operate with standard volatile memory controllers while providing nonvolatile storage.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The interface module provides universal compatibility with multiple memory types (DRAM, SRAM, NAND flash, NOR flash) by converting their respective command, address, and data signals into PRAM-compatible signals. This allows a single PRAM device to replace multiple different memory types, providing both the reliability of nonvolatile storage and the speed of volatile memory operation.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Adaptability or versatility

If different types of memory devices (DRAM, SRAM, flash) are used in a system, then versatility and adaptability are improved, but device complexity and integration difficulty increase

Engineering Contradiction:
Improvememory type compatibilityVSAvoidintegration complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The interface module serves as a universal adapter that accepts command, address, and data signals from various memory types (DRAM, SRAM, NAND flash, NOR flash) and converts them into signals suitable for PRAM operation. This allows existing controllers designed for different memory types to work with PRAM without modification, reducing system complexity while maintaining versatility.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The interface module acts as an intermediary between existing memory controllers and the PRAM memory array. It translates between the signaling protocols of conventional memory devices and PRAM, enabling seamless integration without requiring replacement of existing controllers or complex custom interface design.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Reliability

If PRAM is used to replace other memory types, then operating speed and reliability are improved, but manufacturing complexity increases

Engineering Contradiction:
Improveoperating reliabilityVSAvoidmanufacturing complexity
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The interface module's ability to handle multiple memory protocols allows the same PRAM device to be manufactured and integrated into various applications without requiring different hardware designs. This universal compatibility simplifies the manufacturing process by using a single memory array design that can serve multiple market needs.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The interface module copies and adapts existing memory signaling protocols to work with PRAM, rather than requiring entirely new interface circuits. This approach leverages proven signal conditioning techniques from conventional memory interfaces, reducing manufacturing complexity while achieving improved reliability.

Inventive Principle:
Principle #26Copying

Data Source

PatentUS7580295B2Semiconductor memory device and memory system including semiconductor memory device
Publication Date: 2009.08.25 SAMSUNG ELECTRONICS CO LTD
  • US7580295B2 patent drawing
  • US7580295B2 patent drawing
  • US7580295B2 patent drawing

AI summary

A semiconductor memory device comprises a memory cell array comprising memory cells of a first type. The memory cell array performs write and read operations in response to signals designed for the operation of a memory cell array comprising memory cells of a type other than the first type.