Particle Beam Etching of EUV Lithography Masks
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Solution Overview
Problem
Current methods for producing lithography masks, especially those for deep ultraviolet (DUV) and extreme ultraviolet (EUV) microlithography, face challenges in achieving high resolution and precision due to defects caused by etching processes, which can lead to unintended structure formation and reduced functionality of the masks.
Innovation Solution
A method for particle beam-induced etching of lithography masks involves providing a focused particle beam and specific gaseous components, including a reactive etching gas and a deposition gas, to control the etching process, allowing for targeted removal of defects and improved resolution by forming volatile compounds and minimizing damage to the mask.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional etching procedures are used to produce lithography mask structures, then manufacturing capability is achieved, but defects such as unintended structures and incomplete etching occur, reducing manufacturing precision
Solution Approach 1:
A protective layer is introduced as an intermediary between the particle beam and the lithography mask substrate. This protective layer enables controlled etching by being selectively removed in defect regions while protecting intact areas, thereby improving etching precision and eliminating defects without damaging the overall mask structure
Solution Approach 2:
The protective layer is applied in advance before the etching process. This preliminary action allows the mask to be prepared in a protected state, enabling subsequent selective etching operations to proceed with higher precision and reliability by preventing unintended etching in non-defect areas
2Productivity
If high energy particle beams are used to etch lithography masks, then etching speed increases, but damage to the mask structure and unintended etching occur, worsening manufacturing precision
Solution Approach 1:
The protective layer serves as a mediator that allows high energy particle beams to etch quickly while protecting the mask substrate from direct beam damage. The layer absorbs the harsh etching conditions, enabling fast processing without compromising structure integrity
Solution Approach 2:
The protective layer converts the potentially harmful high energy particle beam into a beneficial fast etching tool. By sacrificing the protective layer in controlled manner, the high energy beam achieves rapid etching while the layer itself prevents damage to the underlying mask structure
3Manufacturing precision
If multiple etching steps are performed to achieve high resolution, then manufacturing precision improves, but process complexity and time increase, reducing productivity
Solution Approach 1:
Multiple etching operations are merged into a single integrated process by using the protective layer approach. Instead of performing separate etching steps, the protective layer enables all necessary etching to be done in one coordinated operation, maintaining high resolution while improving productivity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the control and precision of the etching process, enabling the creation of smaller structures and reducing defects, thereby improving the quality and functionality of lithography masks.
Implementation Method 1
a focused particle beam is beamed onto a target position on the lithography mask; at least one first gaseous component is supplied to the target position, wherein the first gaseous component can be converted by activation into a reactive form
Implementation Method 2
the reactive form reacts with a material of the lithography mask to form a volatile compound
Implementation Method 3
at least one second gaseous component is supplied to the target position in the process atmosphere, wherein the second gaseous component comprises a compound of silicon with oxygen, nitrogen and/or carbon
Data Source
AI summary
Method for the particle beam-induced etching of a lithography mask, more particularly a non-transmissive EUV lithography mask, having the steps of:a) providing the lithography mask in a process atmosphere,b) beaming a focused particle beam onto a target position on the lithography mask,c) supplying at least one first gaseous component to the target position in the process atmosphere, where the first gaseous component can be converted by activation into a reactive form, where the reactive form reacts with a material of the lithography mask to form a volatile compound, andd) supplying at least one second gaseous component to the target position in the process atmosphere, where the second gaseous component under predetermined process conditions with exposure to the particle beam forms a deposit comprising a compound of silicon with oxygen, nitrogen and/or carbon.