Electric Discharge Tubes TRIZ Cases

A charged particle inspection system adjusts stage velocity based on wafer region classification to optimize scanning parameters.

Independent electrode switching modulates ion energy and angular distribution, improving etch uniformity and profile fidelity.

A flip table rotates the sample cutting table to align with a single microscope, eliminating refocusing delays during multi-angle ion beam calibration.

An ion implantation control system estimates beam emittance to calculate optical element operating conditions.

A mesh screen positioned between the plasma source and battery component layer neutralizes charged species to enable precise material deposition.

Segmented RF electrode reduces substrate damage while enabling high-temperature material removal.

Multi-zone electrostatic chuck with independent plate bias circuits and spot lamp zones controls substrate temperature and holding force.

A sample holder design enables flexible positioning and posture adjustment of the sample while maintaining heat insulation.

Common deflection amplifiers manage multiple beam sets to increase throughput without adding proportional device complexity.

Segmented shield members swing into position to cover the substrate carrier, preventing pollutant contamination while avoiding wear-off particles from contact.

Segmenting the blanking aperture array into measurement regions minimizes deflection distortion while maintaining high writing throughput.

Noble gas plasma removes excess metal before dielectric exposure, preventing lateral undercutting and carbon contamination.

Rotating circular substrates against stationary atmospheric plasma sources resolves space constraints while enabling efficient hydrophilization.

A female connector uses twisted fork-shaped signal pins with raised arm portions to maintain pin spacing during insertion.

Ultraviolet light ionizes residual gas to neutralize electrostatic chuck charges, preventing positive charge emission and equipment damage.

A niobium oxide sintered compact serves as a high-density sputtering target for forming resistance change memory layers.

Integrating a multipole electrostatic lens with an electrostatic scanner improves ion dose uniformity without increasing the device footprint.

A charged particle beam adjustment method scans an aperture substrate at a reduced emission current to calculate lens values for precise focus alignment.

Feedback loops adjust target voltage and gas flow rate to maintain transition mode, preventing film quality shifts during long-term operation.

Focused particle beam activates reactive gas to etch lithography mask material into volatile compounds.

Non-uniform protective films prevent sidewall bowing and mask clogging during high aspect ratio etching.

Substrate rotation modulates ion beam angle to treat vertical sidewalls, eliminating shadowing and boosting throughput.

Adjustable metallic supports hold bar-shaped ceramic guides to prevent abnormal discharges on thin resin substrates without frequent replacement.

Segmented movable ground blocks adjust local impedance to resolve azimuthal non-uniformity in plasma processing.

A multi-charged particle beam writing apparatus adjusts stage speed based on calculated unit region writing times.

A segmented second electrode applies DC voltage to shape the electric field within a capacitive coupling plasma processing apparatus.

A top opening mechanism uses a rolling element and rail to lift and slide the container lid laterally.

A combined pumping system mounts a getter pump and an ion pump on a single flange to reduce size and weight.

Segmenting the system into a process and buffer chamber allows consumable replacement while maintaining internal pressure, temperature, and purity conditions.

A plasma processing apparatus measures upper electrode consumption using RF power physical quantities without igniting plasma.

Pressurized gas modulates thermal conductance between liquid coolant and component body, resolving temperature uniformity issues in plasma processing chambers.

A coaxial waveguide plasma generator uses truncated electrodes to produce high energy electrons and UV radiation for efficient gas ionization.

Symmetrically spaced frequency components in a radio frequency power source narrow bandwidth and suppress reflected waves during plasma processing.

A multi-chamber apparatus supplies supercritical carbon dioxide to treat wafers in parallel.

Segmented organic film etching with a conformal oxide layer maintains critical dimensions by suppressing width reduction during plasma processing.

A reactive species generator produces monatomic oxygen and hydrogen to remove organic contaminants from semiconductor substrates.

A measurement device uses secondary charged particle detection to determine probe diameter and profile dimensions.

A heated electrostatic chuck manages thermal energy transfer between the workpiece and processing chamber.

A digital isolator output adjusting unit controls data transmission based on power supply voltage levels.

Gas cluster ion beam etching opens conformal layers in high aspect ratio contact vias, reducing critical dimension loss to 2 nm or less.

A dry etching device applies bi-directional voltage to generate plasma for precise work-piece surface processing.

Integrated ventilation system modulates gas flow rates via variable control devices, eliminating rooftop ductwork and reducing capital costs for ion implanters.

A plasma processing device discharge detection sensor uses a probe electrode to identify potential changes induced by arc discharges.

A film formation time setting method adjusts deposition cycles to optimize silicon-containing film thickness across multiple substrates.

Separating operation screen events from image data reduces network bandwidth consumption while maintaining display quality for semiconductor inspection.

Segmented AlCr(SiC) nitride coatings resolve wear versus welding resistance contradictions in steel machining applications.

Segmented dielectric member with recess portions enhances applied power efficiency in plasma etching chambers.

Fluorine-containing gas volatilizes tungsten deposits on the filament, preventing substrate contamination and extending operational life.

A segmented shutter plate rotates to shield unused targets in a sputtering apparatus.