3D Semiconductor Package Assembly Using Particle Interconnects
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Solution Overview
Problem
The existing methods for vertically stacking semiconductor dies require through-silicon vias (TSVs), which involve complex processing steps and result in larger package thickness, limiting the compactness and efficiency of semiconductor device packaging.
Innovation Solution
A semiconductor device package assembly that stacks semiconductor packages directly without using TSVs, employing a base metallization structure and interconnect structures formed by conductive particles in a thermoset material, allowing for electrical coupling between the base component and stacked packages with negligible Bond Line Thickness (BLT).
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If through-silicon vias (TSVs) are used to electrically interconnect vertically-stacked semiconductor dies, then electrical connectivity between dies is achieved, but the package thickness increases and processing complexity increases due to multiple processing steps
Solution Approach 1:
The patent extracts and eliminates the TSV structure from the semiconductor package. Instead of forming vias through the silicon substrate, the invention uses bond pads on the substrate surface to directly connect to bumped dies, removing the need for TSVs and thereby reducing package thickness while maintaining electrical connectivity
Solution Approach 2:
The patent inverts the traditional interconnection approach: rather than creating conductive paths through the substrate (TSVs), it uses surface-mounted bond pads that directly interface with die bumps. This inversion simplifies the structure and reduces the vertical dimension of the package
2Reliability
If through-silicon vias (TSVs) are used to electrically interconnect vertically-stacked semiconductor dies, then electrical connectivity between dies is achieved, but device complexity increases due to multiple processing steps
Solution Approach 1:
The patent removes the complex TSV formation process entirely. By using substrate bond pads that directly contact die bumps, it eliminates multiple processing steps including via drilling, lining, and filling, thereby reducing device complexity while achieving the same electrical connectivity function
Solution Approach 2:
The invention inverts the interconnection methodology from internal via-based connections to external pad-based connections. This approach simplifies the manufacturing process by eliminating the need for complex TSV formation steps while maintaining reliable electrical connectivity between stacked dies
Data Source
AI summary
Semiconductor device package assemblies and associated methods are disclosed herein. The semiconductor device package assembly includes (1) a base component having a front side and a back side, the base component having a first metallization structure at the front side; (2) a semiconductor device package having a first side, a second side with a recess, and a second metallization structure at the first side and a contacting region exposed in the recess at the second side; (3) an interconnect structure at least partially positioned in the recess at the second side of the semiconductor device package; and (4) a thermoset material or structure between the front side of the base component and the second side of the semiconductor device package. The interconnect structure is in the thermoset material and includes discrete conductive particles electrically coupled to one another.