Partitioned Source-Drain Contacts for 3D IC Power Delivery
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Solution Overview
Problem
The challenge in integrated circuit fabrication is to achieve increased device density and performance while overcoming the limitations of current lithographic processes and interconnect dimensions, particularly in the context of 3D scaling and vertically-oriented device architectures.
Innovation Solution
The implementation of partitioned source or drain contact structures in integrated circuit structures, allowing for connections to be made from both the bottom and top of the devices, which simplifies power delivery and enables interconnects with looser pitch and larger width, improving signal and power delivery performance and reducing manufacturing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional single-sided contact structures are used, then manufacturing process is simpler, but power delivery performance and signal integrity deteriorate
Solution Approach 1:
The contact structure is divided into multiple independent contact regions (first contact region and second contact region) that can be separately formed and connected to different interconnect layers. This segmentation allows optimized power delivery paths while maintaining manufacturing feasibility through standard multi-layer interconnect processes.
Solution Approach 2:
The invention transitions from a single-plane contact structure to a three-dimensional contact architecture where contacts are distributed across multiple layers and interconnected via vertical vias. This dimensional expansion enables simultaneous optimization of power delivery, signal integrity, and manufacturing by utilizing the Z-axis for interconnect routing.
2Quantity of substance
If interconnect pitch is reduced to increase density, then device density improves, but manufacturing precision requirements increase
Solution Approach 1:
Interconnect structures are segmented into multiple functional regions (power interconnects, signal interconnects, ground interconnects) that can be independently routed and dimensioned. This allows different pitch requirements for different interconnect types, enabling high overall density while maintaining manufacturable pitch control for each segment.
Solution Approach 2:
Different regions of the interconnect structure are assigned different local characteristics - some regions use tighter pitch for high-density signal routing, while other regions use looser pitch for power delivery. This local quality differentiation enables optimized manufacturing precision requirements in different areas of the device.
Data Source
AI summary
Integrated circuit structures having partitioned source or drain contact structures, and methods of fabricating integrated circuit structures having partitioned source or drain contact structures, are described. For example, an integrated circuit structure includes a fin. A gate stack is over the fin. A first epitaxial source or drain structure is at a first end of the fin. A second epitaxial source or drain structure is at a second end of the fin. A conductive contact structure is coupled to one of the first or the second epitaxial source or drain structures. The conductive contact structure has a first portion partitioned from a second portion.